FDD20AN06_F085-VB Product details
Product introduction:
The FDD20AN06_F085-VB is a single N-channel MOSFET in a TO252 package, designed for power electronics applications that require high current and high efficiency. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device can meet the high current requirements in medium and low voltage environments. Its gate threshold voltage (Vth) is 2.5V, providing a low on-resistance (RDS(ON)) of 13mΩ (at VGS=4.5V) and 10mΩ (at VGS=10V), respectively, supporting a drain current (ID) of up to 58A. The FDD20AN06_F085-VB uses Trench technology and has excellent switching performance and thermal management capabilities, making it suitable for use in power management and switching applications that require high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package Type**: TO252
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Drain Current (ID)**: 58A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 175°C
- **Maximum Power Dissipation (Ptot)**: 110W
- **Input Capacitance (Ciss)**: 2800pF (typical)
- **Switching speed**: Fast switching characteristics, suitable for high frequency applications
Domain and module applications:
1. **Power Management Systems**:
The FDD20AN06_F085-VB is suitable for various power management applications such as DC-DC converters and power switches. Its low on-resistance and high current handling capability ensure efficient energy conversion and low power consumption, especially in power modules that require stable current and high efficiency.
2. **Automotive Electronics**:
In the automotive electronics field, the FDD20AN06_F085-VB can be used in electric power steering systems, power window controls, and on-board chargers. Its high current handling capability and low on-resistance enable it to provide reliable performance in vehicle systems, suitable for applications that require high performance and durability.
3. **Industrial Automation**:
This MOSFET can be used in motor drives and power control systems in industrial automation equipment. Its high current and high efficiency characteristics make it suitable for use in industrial robots, servo drive systems, and high-efficiency motor controllers, providing stable operating performance and high reliability.
4. **Consumer electronics**:
In consumer electronics, the FDD20AN06_F085-VB is suitable for power management modules and battery switches in portable devices. Its fast switching capability and low on-resistance can extend the battery life of the device and improve overall energy efficiency, especially in high-performance consumer electronics.
From these examples, it can be seen that the FDD20AN06_F085-VB MOSFET has a wide range of application potentials in power management, automotive electronics, industrial automation and consumer electronics, especially in situations that require high performance, high current handling capability and high reliability.
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