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FDD18N20LZ-VB Product details
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FDD18N20LZ-VB Product Introduction
**FDD18N20LZ-VB** is a high-performance N-Channel MOSFET in a TO252 package designed for high voltage and high current applications. Its maximum drain-to-source voltage (VDS) is 200V, making it suitable for use in circuits that require high voltage tolerance. This MOSFET has a low RDS(ON) value of 55mΩ @ VGS=10V, which allows it to maintain low on-resistance under high current conditions, thereby reducing power consumption and heat. The threshold voltage (Vth) of the FDD18N20LZ-VB is 3V, allowing it to be effectively controlled at lower gate-source voltages.
**Key Features:**
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-to-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench
**FDD18N20LZ-VB** is a high-performance N-Channel MOSFET in a TO252 package designed for high voltage and high current applications. Its maximum drain-to-source voltage (VDS) is 200V, making it suitable for use in circuits that require high voltage tolerance. This MOSFET has a low RDS(ON) value of 55mΩ @ VGS=10V, which allows it to maintain low on-resistance under high current conditions, thereby reducing power consumption and heat. The threshold voltage (Vth) of the FDD18N20LZ-VB is 3V, allowing it to be effectively controlled at lower gate-source voltages.
**Key Features:**
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-to-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- This package type provides good heat dissipation and small footprint, suitable for medium power applications.
- **Configuration**: Single-N-Channel
- Suitable for use as the main switching element in switching and amplification circuits.
- **Maximum drain to source voltage (VDS)**: 200V
- Allows safe operation in high voltage circuits and is suitable for use in high voltage environments.
- **Gate-source voltage (VGS)**: ±20V
- Supports a higher gate-source voltage range, which helps to implement switch control and protection circuits.
- **Threshold voltage (Vth)**: 3V
- At this voltage, the MOSFET starts to turn on, suitable for low voltage control applications.
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- Low on-resistance helps reduce power consumption and improve efficiency, suitable for high current applications.
- **Maximum drain current (ID)**: 30A
- High current handling capability makes it suitable for switching and amplifying applications with high current loads.
- **Technology**: Trench
- Using Trench technology can achieve lower on-resistance and higher current handling capability.
- **Package**: TO252
- This package type provides good heat dissipation and small footprint, suitable for medium power applications.
- **Configuration**: Single-N-Channel
- Suitable for use as the main switching element in switching and amplification circuits.
- **Maximum drain to source voltage (VDS)**: 200V
- Allows safe operation in high voltage circuits and is suitable for use in high voltage environments.
- **Gate-source voltage (VGS)**: ±20V
- Supports a higher gate-source voltage range, which helps to implement switch control and protection circuits.
- **Threshold voltage (Vth)**: 3V
- At this voltage, the MOSFET starts to turn on, suitable for low voltage control applications.
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- Low on-resistance helps reduce power consumption and improve efficiency, suitable for high current applications.
- **Maximum drain current (ID)**: 30A
- High current handling capability makes it suitable for switching and amplifying applications with high current loads.
- **Technology**: Trench
- Using Trench technology can achieve lower on-resistance and higher current handling capability.
Domain and module applications：
Applications and Module Examples
1. **Switching Power Supplies**:
The FDD18N20LZ-VB is very suitable for use in switching power supply designs due to its high withstand voltage and low RDS(ON) characteristics. It can switch efficiently in a high voltage environment, thereby improving the efficiency of the power supply and reducing heat generation.
2. **Motor Drivers**:
In motor drive circuits, the FDD18N20LZ-VB can be used as a main switch, providing stable current and low power consumption characteristics, ensuring smooth operation of the motor and reducing energy loss.
3. **Power Amplifiers**:
This MOSFET is suitable for use in power amplifiers due to its low on-resistance and high current carrying capacity, which can improve the performance and efficiency of the overall amplifier.
4. **DC-DC Converters**:
In DC-DC converters, the FDD18N20LZ-VB can be used as an efficient switching element to adjust the voltage and provide a stable output current. Its high voltage and high current handling capabilities make it suitable for a variety of voltage conversion applications.
5. **High Power LED Drivers**:
When used in high-power LED lighting systems, this MOSFET can stably drive LED modules, provide high current and low power consumption operation, and ensure the reliability and efficiency of LED lighting systems.
1. **Switching Power Supplies**:
The FDD18N20LZ-VB is very suitable for use in switching power supply designs due to its high withstand voltage and low RDS(ON) characteristics. It can switch efficiently in a high voltage environment, thereby improving the efficiency of the power supply and reducing heat generation.
2. **Motor Drivers**:
In motor drive circuits, the FDD18N20LZ-VB can be used as a main switch, providing stable current and low power consumption characteristics, ensuring smooth operation of the motor and reducing energy loss.
3. **Power Amplifiers**:
This MOSFET is suitable for use in power amplifiers due to its low on-resistance and high current carrying capacity, which can improve the performance and efficiency of the overall amplifier.
4. **DC-DC Converters**:
In DC-DC converters, the FDD18N20LZ-VB can be used as an efficient switching element to adjust the voltage and provide a stable output current. Its high voltage and high current handling capabilities make it suitable for a variety of voltage conversion applications.
5. **High Power LED Drivers**:
When used in high-power LED lighting systems, this MOSFET can stably drive LED modules, provide high current and low power consumption operation, and ensure the reliability and efficiency of LED lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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