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FDD16AN08_F085-VB Product details
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FDD16AN08_F085-VB MOSFET Product Introduction
FDD16AN08_F085-VB is a high-performance single-N-Channel MOSFET in TO252 package, designed for applications requiring high voltage and high current handling capabilities. Its maximum drain-source voltage (VDS) reaches 100V, suitable for operation in high voltage environments. The MOSFET has a low on-resistance (RDS(ON)) of 18mΩ, which helps reduce power loss and improve circuit efficiency. Using Trench technology, FDD16AN08_F085-VB provides excellent switching performance and thermal stability, suitable for high-frequency and high-efficiency applications.
FDD16AN08_F085-VB is a high-performance single-N-Channel MOSFET in TO252 package, designed for applications requiring high voltage and high current handling capabilities. Its maximum drain-source voltage (VDS) reaches 100V, suitable for operation in high voltage environments. The MOSFET has a low on-resistance (RDS(ON)) of 18mΩ, which helps reduce power loss and improve circuit efficiency. Using Trench technology, FDD16AN08_F085-VB provides excellent switching performance and thermal stability, suitable for high-frequency and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High voltage power management**:
FDD16AN08_F085-VB is very suitable for high voltage power management systems, such as DC-DC converters and AC-DC power modules. Its maximum drain-source voltage of 100V and low on-resistance enable it to work stably in high voltage environments and provide efficient power conversion, reduce energy loss and improve system efficiency.
2. **Motor drive applications**:
In motor drive systems, especially those that need to handle high currents and high voltages, this MOSFET can provide reliable switching performance. Low on-resistance (RDS(ON)) helps reduce power losses and improve the overall efficiency of the motor, making it suitable for applications such as industrial motors and automotive motor drives.
3. **Power switching and control**:
FDD16AN08_F085-VB performs well in power switching and control modules. It can switch stably under high current conditions and is suitable for battery management systems and power distribution units. Its excellent switching performance and thermal stability make it an excellent choice for high-efficiency power control and protection applications.
4. **High-frequency switching circuits**:
Due to its Trench technology, the FDD16AN08_F085-VB is suitable for high-frequency switching circuits. The low on-resistance and fast switching performance make it an ideal choice for RF amplifiers and high-frequency conversion circuits, which require MOSFETs with excellent switching characteristics and thermal management capabilities.
With its high voltage tolerance, low on-resistance and high current handling capabilities, the FDD16AN08_F085-VB MOSFET is an ideal choice for a variety of high-efficiency power management and switching applications.
1. **High voltage power management**:
FDD16AN08_F085-VB is very suitable for high voltage power management systems, such as DC-DC converters and AC-DC power modules. Its maximum drain-source voltage of 100V and low on-resistance enable it to work stably in high voltage environments and provide efficient power conversion, reduce energy loss and improve system efficiency.
2. **Motor drive applications**:
In motor drive systems, especially those that need to handle high currents and high voltages, this MOSFET can provide reliable switching performance. Low on-resistance (RDS(ON)) helps reduce power losses and improve the overall efficiency of the motor, making it suitable for applications such as industrial motors and automotive motor drives.
3. **Power switching and control**:
FDD16AN08_F085-VB performs well in power switching and control modules. It can switch stably under high current conditions and is suitable for battery management systems and power distribution units. Its excellent switching performance and thermal stability make it an excellent choice for high-efficiency power control and protection applications.
4. **High-frequency switching circuits**:
Due to its Trench technology, the FDD16AN08_F085-VB is suitable for high-frequency switching circuits. The low on-resistance and fast switching performance make it an ideal choice for RF amplifiers and high-frequency conversion circuits, which require MOSFETs with excellent switching characteristics and thermal management capabilities.
With its high voltage tolerance, low on-resistance and high current handling capabilities, the FDD16AN08_F085-VB MOSFET is an ideal choice for a variety of high-efficiency power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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