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FDD1600N10ALZ-VB Product details
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Product Introduction - FDD1600N10ALZ-VB
The FDD1600N10ALZ-VB is a single N-channel MOSFET designed for efficient power management and switching applications. Housed in a compact TO252 package, the device is able to withstand drain-source voltages (VDS) up to 100V, making it suitable for circuits that require high reliability and high performance. With its 1.8V threshold voltage (Vth) and low on-resistance (RDS(ON)) based on Trench technology, the MOSFET provides excellent performance in a variety of applications.
The FDD1600N10ALZ-VB is a single N-channel MOSFET designed for efficient power management and switching applications. Housed in a compact TO252 package, the device is able to withstand drain-source voltages (VDS) up to 100V, making it suitable for circuits that require high reliability and high performance. With its 1.8V threshold voltage (Vth) and low on-resistance (RDS(ON)) based on Trench technology, the MOSFET provides excellent performance in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The FDD1600N10ALZ-VB MOSFET is suitable for the following fields and modules:
1. **Power adapter and switching power supply (SMPS)**: The high voltage tolerance and low on-resistance of this MOSFET make it an ideal choice for high-efficiency power converters. It can be used in various power adapter and SMPS designs to improve system efficiency and reduce heat loss.
2. **Battery Management System (BMS)**: In battery management systems that require high voltage control, the FDD1600N10ALZ-VB can be used in switching and protection circuits to ensure safe and efficient battery management, especially in high-voltage battery pack applications.
3. **Motor control**: In industrial and automotive applications, this MOSFET can be used in motor drive circuits to provide stable current control and efficient power conversion, and is particularly suitable for medium-power motor control and inverter circuits.
4. **Photovoltaic Inverter**: In solar applications, the FDD1600N10ALZ-VB is suitable for the DC-AC conversion part of photovoltaic inverters, helping to improve the overall energy efficiency of the system and ensure long-term reliable operation.
By applying the FDD1600N10ALZ-VB MOSFET, designers can achieve higher efficiency and reliability in a variety of demanding circuit designs to meet a wide range of high-voltage power conversion and control needs.
The FDD1600N10ALZ-VB MOSFET is suitable for the following fields and modules:
1. **Power adapter and switching power supply (SMPS)**: The high voltage tolerance and low on-resistance of this MOSFET make it an ideal choice for high-efficiency power converters. It can be used in various power adapter and SMPS designs to improve system efficiency and reduce heat loss.
2. **Battery Management System (BMS)**: In battery management systems that require high voltage control, the FDD1600N10ALZ-VB can be used in switching and protection circuits to ensure safe and efficient battery management, especially in high-voltage battery pack applications.
3. **Motor control**: In industrial and automotive applications, this MOSFET can be used in motor drive circuits to provide stable current control and efficient power conversion, and is particularly suitable for medium-power motor control and inverter circuits.
4. **Photovoltaic Inverter**: In solar applications, the FDD1600N10ALZ-VB is suitable for the DC-AC conversion part of photovoltaic inverters, helping to improve the overall energy efficiency of the system and ensure long-term reliable operation.
By applying the FDD1600N10ALZ-VB MOSFET, designers can achieve higher efficiency and reliability in a variety of demanding circuit designs to meet a wide range of high-voltage power conversion and control needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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