FDD1600N10ALZD-VB Product details
Product introduction:
The FDD1600N10ALZD-VB is a single N-channel MOSFET in a TO252 package, designed for efficient power management and switching applications. It has a maximum drain-source voltage (VDS) of 100V and a maximum gate-source voltage (VGS) of ±20V, and can operate stably in a variety of voltage environments. The threshold voltage (Vth) of this MOSFET is 1.8V, ensuring reliable switching performance at low voltages. With a low on-resistance (RDS(ON)) of 114mΩ and a drain current (ID) of up to 15A, the FDD1600N10ALZD-VB, supported by trench technology (Trench), provides excellent current handling capability and low conduction losses, making it ideal for medium and low voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type (Package): ** TO252
- **Configuration (Configuration): ** Single-N-Channel
- **Maximum drain-source voltage (VDS): ** 100V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): ** 114mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 15A
- **Technology type (Technology): ** Trench technology
Domain and module applications:
FDD1600N10ALZD-VB MOSFET is suitable for various medium and low voltage switching and power management applications. Here are some typical application fields and module examples:
1. **Power management module:** Due to its high drain-source voltage of 100V and low on-resistance, FDD1600N10ALZD-VB is very suitable in power management modules, such as DC-DC converters and power adapters. In these applications, the switching characteristics of MOSFET can significantly reduce energy loss and improve conversion efficiency.
2. **Battery protection circuit:** In the battery protection module, this MOSFET can provide stable over-current and over-voltage protection functions to ensure the safe operation of the battery. Its moderate on-resistance and current handling capability can reduce heat loss during charging and discharging, and extend battery life.
3. **Home appliances and power tools:** FDD1600N10ALZD-VB is suitable for switching circuits in home appliances and power tools. Its 15A drain current capability and low on-resistance can provide stable current control, improving the energy efficiency and operational reliability of the equipment.
4. **Automotive electronic systems:** This MOSFET is suitable for medium and low voltage applications in automotive electronic systems, such as on-board power management and auxiliary system control. Its 100V drain-source voltage ensures stable operation in the automotive electrical environment, while the low on-resistance helps reduce power loss.
5. **Industrial automation control:** In the field of industrial control, the FDD1600N10ALZD-VB can be used in motor control and switching circuits, providing efficient current management and low loss performance, and is suitable for industrial automation equipment that requires high reliability.
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