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FDD10AN06_F085-VB Product details
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FDD10AN06_F085-VB MOSFET Product Introduction
FDD10AN06_F085-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for high current and high voltage applications. The device adopts advanced Trench technology and has a low on-resistance (RDS(ON)), which is 13mΩ at VGS of 4.5V and 10mΩ at VGS of 10V. This low on-resistance and high drain-source voltage (VDS) of 60V design make it have excellent efficiency when handling large currents. Its maximum drain current (ID) is 58A, which is suitable for switching circuits and power conversion applications with higher currents.
FDD10AN06_F085-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for high current and high voltage applications. The device adopts advanced Trench technology and has a low on-resistance (RDS(ON)), which is 13mΩ at VGS of 4.5V and 10mΩ at VGS of 10V. This low on-resistance and high drain-source voltage (VDS) of 60V design make it have excellent efficiency when handling large currents. Its maximum drain current (ID) is 58A, which is suitable for switching circuits and power conversion applications with higher currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FDD10AN06_F085-VB Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Drain current (ID)**: 58A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Drain current (ID)**: 58A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
FDD10AN06_F085-VB Applicable fields and module applications
1. **Power management and DC-DC converters**: FDD10AN06_F085-VB plays an important role in high-efficiency power management and DC-DC converters. It can be used as a switching element to help reduce power loss and improve conversion efficiency. It is very suitable for computer power supplies, industrial power systems, and automotive power management.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can withstand high voltage and high current. It is an ideal choice for motor drive circuits and battery management systems, ensuring stable operation of the system under high load conditions.
3. **Current switch and load switch**: Due to its high current handling capability and low on-resistance, FDD10AN06_F085-VB is very suitable for use as a load switch and current switch, providing reliable performance in power switches, protection circuits, and load management.
4. **Switching Power Supply (SMPS)**: In switching power supply applications, this MOSFET can effectively reduce switching losses and improve the overall efficiency of the power supply. It is especially suitable for high power density switching power supply design.
The high current and high voltage capabilities of FDD10AN06_F085-VB, combined with its low on-resistance, make it perform well in many demanding application scenarios and is an indispensable key component in modern electronic design.
1. **Power management and DC-DC converters**: FDD10AN06_F085-VB plays an important role in high-efficiency power management and DC-DC converters. It can be used as a switching element to help reduce power loss and improve conversion efficiency. It is very suitable for computer power supplies, industrial power systems, and automotive power management.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can withstand high voltage and high current. It is an ideal choice for motor drive circuits and battery management systems, ensuring stable operation of the system under high load conditions.
3. **Current switch and load switch**: Due to its high current handling capability and low on-resistance, FDD10AN06_F085-VB is very suitable for use as a load switch and current switch, providing reliable performance in power switches, protection circuits, and load management.
4. **Switching Power Supply (SMPS)**: In switching power supply applications, this MOSFET can effectively reduce switching losses and improve the overall efficiency of the power supply. It is especially suitable for high power density switching power supply design.
The high current and high voltage capabilities of FDD10AN06_F085-VB, combined with its low on-resistance, make it perform well in many demanding application scenarios and is an indispensable key component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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