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FDD107AN06LA0-VB Product details
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FDD107AN06LA0-VB MOSFET Product Introduction
FDD107AN06LA0-VB is a single-N-Channel MOSFET in TO252 package with a maximum drain-source voltage (VDS) of 60V, suitable for high-efficiency power management applications. Its features include low on-resistance and high current handling capability, and it is widely used in power conversion, power switching and other high-efficiency applications. This MOSFET uses Trench technology, which gives it excellent switching performance and thermal stability, suitable for high-frequency and high-efficiency electronic systems.
FDD107AN06LA0-VB is a single-N-Channel MOSFET in TO252 package with a maximum drain-source voltage (VDS) of 60V, suitable for high-efficiency power management applications. Its features include low on-resistance and high current handling capability, and it is widely used in power conversion, power switching and other high-efficiency applications. This MOSFET uses Trench technology, which gives it excellent switching performance and thermal stability, suitable for high-frequency and high-efficiency electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management systems**:
The low on-resistance and high current handling capability of the FDD107AN06LA0-VB make it ideal for use in power management systems, such as DC-DC converters and power supplies. These systems require high-efficiency switching elements to improve overall efficiency and reduce power consumption, especially at high frequencies and high currents.
2. **Power switching applications**:
In motor drive and load switching applications, this MOSFET provides stable current control and high-efficiency switching performance. Due to its low RDS(ON) value, it can effectively reduce switching losses and improve the overall efficiency of the system, making it suitable for power switches in industrial equipment and automotive electronic systems.
3. **High-frequency switching circuits**:
Because the FDD107AN06LA0-VB uses Trench technology, it performs well in high-frequency switching applications. Its low on-resistance and fast switching speed make it suitable for use in RF amplifiers and high-frequency conversion circuits, which require MOSFETs with good switching performance and thermal stability.
4. **Battery Management System**:
In the battery management system, this MOSFET can be used for overcurrent protection and power distribution. Its low RDS(ON) value helps reduce power consumption, provides reliable current switch control, and ensures safe and efficient operation of the battery system.
FDD107AN06LA0-VB MOSFET is an ideal choice for various high-efficiency power control and management systems due to its excellent parameters and wide application areas.
1. **Power management systems**:
The low on-resistance and high current handling capability of the FDD107AN06LA0-VB make it ideal for use in power management systems, such as DC-DC converters and power supplies. These systems require high-efficiency switching elements to improve overall efficiency and reduce power consumption, especially at high frequencies and high currents.
2. **Power switching applications**:
In motor drive and load switching applications, this MOSFET provides stable current control and high-efficiency switching performance. Due to its low RDS(ON) value, it can effectively reduce switching losses and improve the overall efficiency of the system, making it suitable for power switches in industrial equipment and automotive electronic systems.
3. **High-frequency switching circuits**:
Because the FDD107AN06LA0-VB uses Trench technology, it performs well in high-frequency switching applications. Its low on-resistance and fast switching speed make it suitable for use in RF amplifiers and high-frequency conversion circuits, which require MOSFETs with good switching performance and thermal stability.
4. **Battery Management System**:
In the battery management system, this MOSFET can be used for overcurrent protection and power distribution. Its low RDS(ON) value helps reduce power consumption, provides reliable current switch control, and ensures safe and efficient operation of the battery system.
FDD107AN06LA0-VB MOSFET is an ideal choice for various high-efficiency power control and management systems due to its excellent parameters and wide application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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