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FDD107AN06LA0-NL-VB Product details
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Product Introduction - FDD107AN06LA0-VB
FDD107AN06LA0-VB is a single N-channel MOSFET in TO252 package. Based on Trench technology, the device has low on-resistance and high current carrying capacity. With a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V, it is suitable for a variety of power management and switching circuit applications.
FDD107AN06LA0-VB is a single N-channel MOSFET in TO252 package. Based on Trench technology, the device has low on-resistance and high current carrying capacity. With a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V, it is suitable for a variety of power management and switching circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 85mΩ @ VGS=4.5V; 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 85mΩ @ VGS=4.5V; 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The FDD107AN06LA0-VB MOSFET is suitable for the following applications and modules:
1. **Power management module**: This device is suitable for synchronous rectification in DC-DC converters, which can improve conversion efficiency and reduce power consumption.
2. **Motor drive module**: In small motor drive applications, the low on-resistance of this MOSFET helps reduce the power consumption of the motor drive circuit and improve system efficiency.
3. **Load switch circuit**: The FDD107AN06LA0-VB can be used as a load switch to control medium-power loads due to its high current carrying capacity and low conduction loss.
4. **Consumer electronics**: This device can be applied to power switching and regulation modules in consumer electronics, such as TVs, computers and other home appliances.
By using the FDD107AN06LA0-VB MOSFET, designers can achieve higher efficiency and reliability in a variety of applications, especially when compact packaging and high-efficiency performance are required.
The FDD107AN06LA0-VB MOSFET is suitable for the following applications and modules:
1. **Power management module**: This device is suitable for synchronous rectification in DC-DC converters, which can improve conversion efficiency and reduce power consumption.
2. **Motor drive module**: In small motor drive applications, the low on-resistance of this MOSFET helps reduce the power consumption of the motor drive circuit and improve system efficiency.
3. **Load switch circuit**: The FDD107AN06LA0-VB can be used as a load switch to control medium-power loads due to its high current carrying capacity and low conduction loss.
4. **Consumer electronics**: This device can be applied to power switching and regulation modules in consumer electronics, such as TVs, computers and other home appliances.
By using the FDD107AN06LA0-VB MOSFET, designers can achieve higher efficiency and reliability in a variety of applications, especially when compact packaging and high-efficiency performance are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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