中文
English
FDD044AN03L-VB Product details
Back to previous pageProduct introduction：
FDD044AN03L-VB MOSFET Product Introduction
The FDD044AN03L-VB is a high-performance N-channel MOSFET suitable for a variety of power management and switching applications. It uses a TO-252 package and adopts advanced Trench technology to provide low switch resistance and high current capability. This MOSFET is ideal for applications requiring efficient power switching, providing a drain-source voltage (VDS) of 30V, a maximum drain current (ID) of 100A, and a low threshold voltage (Vth) of 1.7V.
The FDD044AN03L-VB is a high-performance N-channel MOSFET suitable for a variety of power management and switching applications. It uses a TO-252 package and adopts advanced Trench technology to provide low switch resistance and high current capability. This MOSFET is ideal for applications requiring efficient power switching, providing a drain-source voltage (VDS) of 30V, a maximum drain current (ID) of 100A, and a low threshold voltage (Vth) of 1.7V.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type:** TO-252
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 30V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 1.7V
- **RDS(ON) (on-resistance):**
- 3mΩ at 4.5V
- 2mΩ at 10V
- **ID (continuous leakage current):** 100A
- **Technology:** Trench
- **Package type:** TO-252
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 30V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 1.7V
- **RDS(ON) (on-resistance):**
- 3mΩ at 4.5V
- 2mΩ at 10V
- **ID (continuous leakage current):** 100A
- **Technology:** Trench
Domain and module applications：
Application Examples
The FDD044AN03L-VB MOSFET is suitable for a wide range of applications that require efficient power management and high current handling. Examples include:
1. **DC-DC Converters:** The low on-resistance and high current capability make this MOSFET ideal for use in DC-DC converters, where efficiency and power density are critical.
2. **Motor Control:** Its high current handling capability and low threshold voltage make it suitable for motor control applications in electric vehicles or industrial environments, which require precise control and high efficiency.
3. **Power Supply Unit (PSU):** The FDD044AN03L-VB can be used in power supply units to efficiently switch and regulate power to ensure stable operation under different loads.
4. **Battery Management System (BMS):** The characteristics of the MOSFET are well suited for use in battery management systems, especially in electric vehicles (EVs) and energy storage systems, to ensure reliable and efficient battery operation.
5. **Load Switching:** Low RDS(ON) makes this MOSFET ideal for load switching applications, ensuring minimal power loss and efficient operation in various electronic circuits.
The FDD044AN03L-VB MOSFET is suitable for a wide range of applications that require efficient power management and high current handling. Examples include:
1. **DC-DC Converters:** The low on-resistance and high current capability make this MOSFET ideal for use in DC-DC converters, where efficiency and power density are critical.
2. **Motor Control:** Its high current handling capability and low threshold voltage make it suitable for motor control applications in electric vehicles or industrial environments, which require precise control and high efficiency.
3. **Power Supply Unit (PSU):** The FDD044AN03L-VB can be used in power supply units to efficiently switch and regulate power to ensure stable operation under different loads.
4. **Battery Management System (BMS):** The characteristics of the MOSFET are well suited for use in battery management systems, especially in electric vehicles (EVs) and energy storage systems, to ensure reliable and efficient battery operation.
5. **Load Switching:** Low RDS(ON) makes this MOSFET ideal for load switching applications, ensuring minimal power loss and efficient operation in various electronic circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
