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FDC86244-VB Product details
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Product Introduction
FDC86244-VB is a unipolar N-channel MOSFET with excellent performance, using SOT23-6 package. This MOSFET is designed for high-performance and high-voltage applications, with low on-resistance and high current carrying capacity. The V_DS of FDC86244-VB can reach 100V, making it suitable for a variety of high-voltage application scenarios, especially in situations that require high voltage resistance and low conduction loss.
FDC86244-VB is a unipolar N-channel MOSFET with excellent performance, using SOT23-6 package. This MOSFET is designed for high-performance and high-voltage applications, with low on-resistance and high current carrying capacity. The V_DS of FDC86244-VB can reach 100V, making it suitable for a variety of high-voltage application scenarios, especially in situations that require high voltage resistance and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- 105mΩ at 4.5V gate-source voltage
- 95mΩ at 10V gate-source voltage
- **Maximum drain current (I_D)**: 3.2A
- **Technology**: Trench
- **Package**: SOT23-6
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- 105mΩ at 4.5V gate-source voltage
- 95mΩ at 10V gate-source voltage
- **Maximum drain current (I_D)**: 3.2A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The design and parameters of the FDC86244-VB MOSFET make it suitable for a variety of applications and modules:
1. **Switching Power Supply**: Due to its low on-resistance and high voltage withstand capability, the FDC86244-VB is very suitable for use in switching power supply designs. This makes it easier to achieve high-efficiency energy conversion in high-voltage environments, thereby improving the energy efficiency of the overall system.
2. **Motor Drive**: In motor drive circuits, the FDC86244-VB can be used as a power switching element, especially in situations where high current and high voltage resistance are required. Its low on-resistance helps reduce energy losses during motor drive and improves the performance of motor drive systems.
3. **Battery Management System**: In battery management systems, the high voltage withstand characteristics and low on-resistance of the MOSFET make it an ideal choice for battery protection and load switching. This MOSFET can effectively manage the battery charging and discharging process to ensure the safety and reliability of the system.
4. **LED driver**: In the LED driver circuit, FDC86244-VB can be used as a switching element to adjust the LED current. The low on-resistance of this MOSFET ensures high efficiency and low energy loss in LED driving.
In short, FDC86244-VB is a high-efficiency and widely applicable MOSFET, which is very suitable for application scenarios requiring high voltage, high current and low conduction loss.
The design and parameters of the FDC86244-VB MOSFET make it suitable for a variety of applications and modules:
1. **Switching Power Supply**: Due to its low on-resistance and high voltage withstand capability, the FDC86244-VB is very suitable for use in switching power supply designs. This makes it easier to achieve high-efficiency energy conversion in high-voltage environments, thereby improving the energy efficiency of the overall system.
2. **Motor Drive**: In motor drive circuits, the FDC86244-VB can be used as a power switching element, especially in situations where high current and high voltage resistance are required. Its low on-resistance helps reduce energy losses during motor drive and improves the performance of motor drive systems.
3. **Battery Management System**: In battery management systems, the high voltage withstand characteristics and low on-resistance of the MOSFET make it an ideal choice for battery protection and load switching. This MOSFET can effectively manage the battery charging and discharging process to ensure the safety and reliability of the system.
4. **LED driver**: In the LED driver circuit, FDC86244-VB can be used as a switching element to adjust the LED current. The low on-resistance of this MOSFET ensures high efficiency and low energy loss in LED driving.
In short, FDC86244-VB is a high-efficiency and widely applicable MOSFET, which is very suitable for application scenarios requiring high voltage, high current and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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