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FDC658P-VB Product details
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FDC658P-VB MOSFET Product Introduction
The FDC658P-VB is a high-performance single P-channel MOSFET that uses advanced Trench technology and is designed for low-voltage applications. It is packaged in SOT23-6, suitable for compact circuit design. The device has a low on-resistance (RDS(ON)), which is 54mΩ at VGS of 4.5V and 49mΩ at VGS of 10V. It has a rated drain-source voltage (VDS) of -30V and a gate voltage (VGS) of ±20V, and can handle a current of up to 4.8A. These features make the FDC658P-VB an excellent performer in power management and switching circuits, and is suitable for high-efficiency and space-limited applications.
The FDC658P-VB is a high-performance single P-channel MOSFET that uses advanced Trench technology and is designed for low-voltage applications. It is packaged in SOT23-6, suitable for compact circuit design. The device has a low on-resistance (RDS(ON)), which is 54mΩ at VGS of 4.5V and 49mΩ at VGS of 10V. It has a rated drain-source voltage (VDS) of -30V and a gate voltage (VGS) of ±20V, and can handle a current of up to 4.8A. These features make the FDC658P-VB an excellent performer in power management and switching circuits, and is suitable for high-efficiency and space-limited applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
FDC658P-VB Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
FDC658P-VB applicable fields and module applications
1. **Power management module**: FDC658P-VB is suitable for power management modules of devices such as laptops, smartphones and tablets. It can help devices effectively switch loads in low-power mode and maintain efficient power management.
2. **DC-DC converter**: In DC-DC converter applications, the device can be used as a synchronous rectifier to reduce the power loss of the converter and improve the overall energy efficiency. It is especially suitable for portable electronic devices and industrial control systems.
3. **Load switch**: This MOSFET can be used for load switches in power line protection circuits, especially in scenarios that require fast response time and low on-resistance, such as in automotive electronics and industrial automation control.
4. **Battery protection circuit**: FDC658P-VB is also commonly used in lithium battery protection circuits to prevent batteries from overcharging or over-discharging by effectively controlling the current during charging and discharging.
These features make FDC658P-VB an excellent performer in the miniaturization and high-performance requirements of modern electronic equipment, and it is an indispensable key device in various applications.
1. **Power management module**: FDC658P-VB is suitable for power management modules of devices such as laptops, smartphones and tablets. It can help devices effectively switch loads in low-power mode and maintain efficient power management.
2. **DC-DC converter**: In DC-DC converter applications, the device can be used as a synchronous rectifier to reduce the power loss of the converter and improve the overall energy efficiency. It is especially suitable for portable electronic devices and industrial control systems.
3. **Load switch**: This MOSFET can be used for load switches in power line protection circuits, especially in scenarios that require fast response time and low on-resistance, such as in automotive electronics and industrial automation control.
4. **Battery protection circuit**: FDC658P-VB is also commonly used in lithium battery protection circuits to prevent batteries from overcharging or over-discharging by effectively controlling the current during charging and discharging.
These features make FDC658P-VB an excellent performer in the miniaturization and high-performance requirements of modern electronic equipment, and it is an indispensable key device in various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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