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FDC654P-VB Product details
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Product Introduction
**FDC654P-VB** is a high-performance unipolar P-channel MOSFET in a SOT23-6 package. It uses Trench technology and is designed for low-voltage applications. The MOSFET supports a drain-source voltage (VDS) of up to -30V and a gate-source voltage (VGS) of ±20V, and can handle a maximum drain current (ID) of -4.8A. Its on-resistance (RDS(ON)) is 54mΩ and 49mΩ, measured at VGS of 4.5V and 10V, respectively. Due to its excellent performance, it is very suitable for low-power and high-efficiency switching applications.
**FDC654P-VB** is a high-performance unipolar P-channel MOSFET in a SOT23-6 package. It uses Trench technology and is designed for low-voltage applications. The MOSFET supports a drain-source voltage (VDS) of up to -30V and a gate-source voltage (VGS) of ±20V, and can handle a maximum drain current (ID) of -4.8A. Its on-resistance (RDS(ON)) is 54mΩ and 49mΩ, measured at VGS of 4.5V and 10V, respectively. Due to its excellent performance, it is very suitable for low-power and high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Model**: FDC654P-VB
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench
- **Model**: FDC654P-VB
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
1. **Power management**:
The FDC654P-VB is very suitable for power management applications due to its low on-resistance and high current handling capability. It can be used as a power switch to control the connection and disconnection of power to ensure efficient and stable operation of the power system. In DC-DC converters, it can be used as the main switching element to improve conversion efficiency and reduce power consumption.
2. **Load switch**:
This MOSFET performs well in load switch applications. It can be used for load switching in switching power supplies, load control of low-power circuits, and other occasions that require efficient switching control. For example, it can be used for load control in home appliances and industrial equipment to ensure stability and reliability when the equipment is turned on or off.
3. **Portable devices**:
The small package (SOT23-6) and excellent performance of the FDC654P-VB make it very suitable for portable devices. It can be used for power switching and circuit protection in smartphones, tablets, and other portable electronic devices to provide efficient power management for these devices.
4. **Motor drive**:
In motor drive applications, the FDC654P-VB can be used as a switching element in motor control circuits. Its low on-resistance and high current handling capability enable it to effectively control the start and stop of small motors, and is suitable for power tools, toys, and automation systems.
These application examples demonstrate the wide applicability and excellent performance of the FDC654P-VB in power management, load switching, portable devices, and motor drives.
1. **Power management**:
The FDC654P-VB is very suitable for power management applications due to its low on-resistance and high current handling capability. It can be used as a power switch to control the connection and disconnection of power to ensure efficient and stable operation of the power system. In DC-DC converters, it can be used as the main switching element to improve conversion efficiency and reduce power consumption.
2. **Load switch**:
This MOSFET performs well in load switch applications. It can be used for load switching in switching power supplies, load control of low-power circuits, and other occasions that require efficient switching control. For example, it can be used for load control in home appliances and industrial equipment to ensure stability and reliability when the equipment is turned on or off.
3. **Portable devices**:
The small package (SOT23-6) and excellent performance of the FDC654P-VB make it very suitable for portable devices. It can be used for power switching and circuit protection in smartphones, tablets, and other portable electronic devices to provide efficient power management for these devices.
4. **Motor drive**:
In motor drive applications, the FDC654P-VB can be used as a switching element in motor control circuits. Its low on-resistance and high current handling capability enable it to effectively control the start and stop of small motors, and is suitable for power tools, toys, and automation systems.
These application examples demonstrate the wide applicability and excellent performance of the FDC654P-VB in power management, load switching, portable devices, and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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