FDC642P F085-VB Product details
Product introduction:
The FDC642P F085-VB is a high-performance P-channel power MOSFET in a SOT23-6 package. It is designed to handle a drain-source breakdown voltage (VDS) of -30V and a continuous drain current (ID) of -4.8A. Using Trench technology, this MOSFET provides a low on-resistance of 49mΩ at VGS = 10V and 54mΩ at VGS = 4.5V. This makes the FDC642P F085-VB suitable for circuit applications requiring efficient switching and low conduction losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source breakdown voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications:
The high performance characteristics of FDC642P F085-VB make it suitable for a variety of fields and modules, especially the following applications:
1. **Load switch**:
FDC642P F085-VB is very suitable for load switching applications due to its low on-resistance and high current capability. It can effectively control the on and off state of the load, provide reliable switching performance in low-power circuits, and ensure the stability and efficiency of the load.
2. **Battery-powered devices**:
In battery-powered devices such as portable electronics and mobile devices, FDC642P F085-VB can be used for battery management and switching circuits. Its low on-resistance helps reduce power loss and improve battery efficiency, thereby extending the working time of the device.
3. **DC-DC converter**:
In DC-DC converters, FDC642P F085-VB acts as a switching element, which can provide efficient current switching. Its low on-resistance and high current handling capability enable it to maintain high efficiency during the conversion process, reduce energy loss, and improve the overall system performance.
4. **Power Management**:
For power management systems such as power switches and protection circuits, the FDC642P F085-VB provides stable switching performance and low power consumption characteristics. It can be used for functions such as power on-off control and power protection to ensure the stability and safety of the power system.
5. **Overcurrent Protection and Current Limitation**:
The FDC642P F085-VB can be used in overcurrent protection circuits, and its high current capability and low on-resistance enable it to effectively handle overcurrent conditions. It can provide reliable protection against circuit damage caused by excessive current.
In summary, the FDC642P F085-VB MOSFET performs well in applications such as load switches, battery-powered devices, DC-DC converters, power management, and overcurrent protection through its low on-resistance, moderate drain-source breakdown voltage, and high current handling capability. It provides high-performance and low-power solutions for various circuit designs.
Technical support:
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