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FDC640P-VB Product details
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FDC640P-VB MOSFET Product Introduction
The FDC640P-VB is a high-performance P-channel power MOSFET in a SOT23-6 package. The device is manufactured using Trench technology and features a drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A. Its low on-resistance enables it to excel in low-voltage drive and high-current applications, and is particularly suitable for applications requiring efficient switching and power management. Its compact SOT23-6 package also makes it particularly suitable for space-constrained applications.
The FDC640P-VB is a high-performance P-channel power MOSFET in a SOT23-6 package. The device is manufactured using Trench technology and features a drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A. Its low on-resistance enables it to excel in low-voltage drive and high-current applications, and is particularly suitable for applications requiring efficient switching and power management. Its compact SOT23-6 package also makes it particularly suitable for space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
- **Maximum power dissipation**: 1.2W
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 980pF
- **Typical application frequency**: High frequency switching applications
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
- **Maximum power dissipation**: 1.2W
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 980pF
- **Typical application frequency**: High frequency switching applications
Domain and module applications：
Applications and module examples
1. **Low voltage power switch**
The low on-resistance and low gate threshold voltage of the FDC640P-VB make it ideal for low voltage power switch applications. In mobile devices and compact power modules, this MOSFET can efficiently manage power switching functions, ensuring efficient system operation and extended battery life.
2. **Power management and power modules**
In power management modules, the FDC640P-VB is capable of handling medium current loads and is suitable for DC-DC converters and power distribution circuits. Its high switching speed and low on-resistance help improve power conversion efficiency and system stability.
3. **Portable electronic devices**
Due to its compact SOT23-6 package, the FDC640P-VB is suitable for power switching and power management applications in portable electronic devices. In these applications, it can effectively manage power to optimize the performance and battery life of the device.
4. **LED Driver**
In LED driver applications, the FDC640P-VB can be used as a switching element for LED lamps. Its low on-resistance ensures efficient current control, improving the brightness and overall performance of LED lamps while increasing service life.
5. **Battery Protection Circuit**
The FDC640P-VB also has potential for application in battery protection circuits. It can be used to prevent overcharge or overdischarge, protect the battery from damage by abnormal current, and ensure safe use of the battery.
In summary, the FDC640P-VB MOSFET, with its excellent electrical performance and compact package design, can provide reliable performance in low-voltage switching, power management, portable electronic devices, LED driving and battery protection, and is an ideal choice for a variety of high-performance applications.
1. **Low voltage power switch**
The low on-resistance and low gate threshold voltage of the FDC640P-VB make it ideal for low voltage power switch applications. In mobile devices and compact power modules, this MOSFET can efficiently manage power switching functions, ensuring efficient system operation and extended battery life.
2. **Power management and power modules**
In power management modules, the FDC640P-VB is capable of handling medium current loads and is suitable for DC-DC converters and power distribution circuits. Its high switching speed and low on-resistance help improve power conversion efficiency and system stability.
3. **Portable electronic devices**
Due to its compact SOT23-6 package, the FDC640P-VB is suitable for power switching and power management applications in portable electronic devices. In these applications, it can effectively manage power to optimize the performance and battery life of the device.
4. **LED Driver**
In LED driver applications, the FDC640P-VB can be used as a switching element for LED lamps. Its low on-resistance ensures efficient current control, improving the brightness and overall performance of LED lamps while increasing service life.
5. **Battery Protection Circuit**
The FDC640P-VB also has potential for application in battery protection circuits. It can be used to prevent overcharge or overdischarge, protect the battery from damage by abnormal current, and ensure safe use of the battery.
In summary, the FDC640P-VB MOSFET, with its excellent electrical performance and compact package design, can provide reliable performance in low-voltage switching, power management, portable electronic devices, LED driving and battery protection, and is an ideal choice for a variety of high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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