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FDC638P-VB Product details
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FDC638P-VB MOSFET Product Introduction
FDC638P-VB is a high-performance P-channel MOSFET in a SOT23-6 package, designed for low voltage and medium current applications. Its drain-source voltage (VDS) is -30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is -1.7V. The FDC638P-VB has excellent on-resistance (RDS(ON)), which is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and can support a drain current (ID) of up to -4.8A. Using Trench technology, this MOSFET provides excellent switching performance and low power consumption characteristics, and is very suitable for applications with strict requirements on switching frequency and power consumption.
FDC638P-VB is a high-performance P-channel MOSFET in a SOT23-6 package, designed for low voltage and medium current applications. Its drain-source voltage (VDS) is -30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is -1.7V. The FDC638P-VB has excellent on-resistance (RDS(ON)), which is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and can support a drain current (ID) of up to -4.8A. Using Trench technology, this MOSFET provides excellent switching performance and low power consumption characteristics, and is very suitable for applications with strict requirements on switching frequency and power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **Portable electronic devices**: The FDC638P-VB is ideal for mobile phones, tablets, and other portable devices. Its low on-resistance and high switching frequency enable this MOSFET to efficiently switch power, helping to extend battery life and improve the overall performance of the device.
2. **Battery protection circuit**: In battery management systems, the FDC638P-VB is able to provide stable switching control. Its low on-resistance enables effective current control in battery protection circuits, protecting batteries from overcurrent and overdischarge.
3. **Power management**: The FDC638P-VB is widely used in power management systems, such as DC-DC converters and power switches. Its high efficiency and low power consumption enable it to provide stable performance in power conversion and load switching, reducing power consumption and improving system efficiency.
4. **Load Switch**: Due to its low on-resistance and high current handling capability, the FDC638P-VB is suitable for various load switch applications, such as switch control in power adapters, power switches in power amplifiers, etc. Its excellent switching performance and durability ensure the reliability and stability of the system.
With its excellent switching performance and low power consumption characteristics, the FDC638P-VB MOSFET is an ideal choice for electronic applications that require efficient switching and low power consumption. It performs well in portable devices, battery protection, power management, and load switching.
1. **Portable electronic devices**: The FDC638P-VB is ideal for mobile phones, tablets, and other portable devices. Its low on-resistance and high switching frequency enable this MOSFET to efficiently switch power, helping to extend battery life and improve the overall performance of the device.
2. **Battery protection circuit**: In battery management systems, the FDC638P-VB is able to provide stable switching control. Its low on-resistance enables effective current control in battery protection circuits, protecting batteries from overcurrent and overdischarge.
3. **Power management**: The FDC638P-VB is widely used in power management systems, such as DC-DC converters and power switches. Its high efficiency and low power consumption enable it to provide stable performance in power conversion and load switching, reducing power consumption and improving system efficiency.
4. **Load Switch**: Due to its low on-resistance and high current handling capability, the FDC638P-VB is suitable for various load switch applications, such as switch control in power adapters, power switches in power amplifiers, etc. Its excellent switching performance and durability ensure the reliability and stability of the system.
With its excellent switching performance and low power consumption characteristics, the FDC638P-VB MOSFET is an ideal choice for electronic applications that require efficient switching and low power consumption. It performs well in portable devices, battery protection, power management, and load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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