FDC638APZ-VB Product details
Product introduction:
FDC638APZ-VB is a high-performance P-channel MOSFET in a compact SOT23-6 package. This MOSFET is designed for low-voltage, high-efficiency applications, with a maximum drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage (Vth) is -1.7V, and it has excellent conduction performance, with an on-resistance (RDS(ON)) of 49mΩ at a VGS of 10V and 54mΩ at a VGS of 4.5V. This MOSFET supports a drain current of up to -4.8A and uses Trench technology, providing efficient switching performance and low power consumption, making it suitable for a variety of high-efficiency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Package type**: SOT23-6
- **Polarity**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Drain current (ID)**: -4.8A
- **Technology type**: Trench
Domain and module applications:
The high performance characteristics of the FDC638APZ-VB make it suitable for multiple fields and modules, especially in applications that require efficient switching and low power consumption:
1. **Low voltage power switch**: Due to its low on-resistance and high current capability, the FDC638APZ-VB is suitable for low voltage power switching. For example, in mobile devices and compact power modules, it can effectively manage power switching, reduce power consumption, and improve power efficiency.
2. **Battery management system**: In battery management systems, the FDC638APZ-VB can be used as a battery switch to help optimize battery usage efficiency. In smartphones, tablets, and other portable electronic devices, it can improve battery life and enhance the overall performance of the system.
3. **Motor drive circuit**: In motor drive applications, this MOSFET can be used as an efficient switching element to control the start and stop and speed regulation of the motor. Its excellent switching performance and low on-resistance help improve the efficiency and response speed of the motor.
4. **Low-power analog switches**: The low on-resistance and efficient switching performance of the FDC638APZ-VB make it suitable for low-power analog switches. In the switching of audio and video signals, it can reduce signal loss and maintain high-quality signal transmission.
5. **Consumer electronic devices**: In various consumer electronic devices, such as portable audio and digital cameras, the FDC638APZ-VB can be used for power management and signal switching. It can help these devices maintain stable performance in different operating modes while optimizing energy usage.
These application scenarios demonstrate the advantages of the FDC638APZ-VB in high-performance and low-power applications. Its low on-resistance and efficient switching performance make it an ideal choice for a variety of electronic applications.
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