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FDC638APZ-VB Product details

Product introduction:

Product Introduction: FDC638APZ-VB

FDC638APZ-VB is a high-performance P-channel MOSFET in a compact SOT23-6 package. This MOSFET is designed for low-voltage, high-efficiency applications, with a maximum drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage (Vth) is -1.7V, and it has excellent conduction performance, with an on-resistance (RDS(ON)) of 49mΩ at a VGS of 10V and 54mΩ at a VGS of 4.5V. This MOSFET supports a drain current of up to -4.8A and uses Trench technology, providing efficient switching performance and low power consumption, making it suitable for a variety of high-efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 49mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
Detailed parameter description

- **Package type**: SOT23-6
- **Polarity**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Drain current (ID)**: -4.8A
- **Technology type**: Trench

Domain and module applications:

Applications and modules

The high performance characteristics of the FDC638APZ-VB make it suitable for multiple fields and modules, especially in applications that require efficient switching and low power consumption:

1. **Low voltage power switch**: Due to its low on-resistance and high current capability, the FDC638APZ-VB is suitable for low voltage power switching. For example, in mobile devices and compact power modules, it can effectively manage power switching, reduce power consumption, and improve power efficiency.

2. **Battery management system**: In battery management systems, the FDC638APZ-VB can be used as a battery switch to help optimize battery usage efficiency. In smartphones, tablets, and other portable electronic devices, it can improve battery life and enhance the overall performance of the system.

3. **Motor drive circuit**: In motor drive applications, this MOSFET can be used as an efficient switching element to control the start and stop and speed regulation of the motor. Its excellent switching performance and low on-resistance help improve the efficiency and response speed of the motor.

4. **Low-power analog switches**: The low on-resistance and efficient switching performance of the FDC638APZ-VB make it suitable for low-power analog switches. In the switching of audio and video signals, it can reduce signal loss and maintain high-quality signal transmission.

5. **Consumer electronic devices**: In various consumer electronic devices, such as portable audio and digital cameras, the FDC638APZ-VB can be used for power management and signal switching. It can help these devices maintain stable performance in different operating modes while optimizing energy usage.

These application scenarios demonstrate the advantages of the FDC638APZ-VB in high-performance and low-power applications. Its low on-resistance and efficient switching performance make it an ideal choice for a variety of electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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