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FDC636P-VB Product details
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FDC636P-VB Product Introduction
FDC636P-VB is a high-performance P-channel MOSFET in SOT-23-6 package. This MOSFET is designed for low-voltage, high-current applications, with a drain-source voltage (VDS) of -30V, suitable for handling negative voltage environments. Its on-resistance (RDS(ON)) is very low, at 49mΩ and 54mΩ, respectively, measured at VGS=10V and 4.5V, ensuring high efficiency and low power consumption. FDC636P-VB adopts Trench technology, with excellent switching performance and low power loss, and can provide stable and reliable current control, which is very suitable for use in various high-performance electronic devices and modules.
FDC636P-VB is a high-performance P-channel MOSFET in SOT-23-6 package. This MOSFET is designed for low-voltage, high-current applications, with a drain-source voltage (VDS) of -30V, suitable for handling negative voltage environments. Its on-resistance (RDS(ON)) is very low, at 49mΩ and 54mΩ, respectively, measured at VGS=10V and 4.5V, ensuring high efficiency and low power consumption. FDC636P-VB adopts Trench technology, with excellent switching performance and low power loss, and can provide stable and reliable current control, which is very suitable for use in various high-performance electronic devices and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package type**: SOT-23-6
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
- **Package type**: SOT-23-6
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
Applications and modules
Due to its low on-resistance and high current handling capability, the FDC636P-VB is widely used in the following fields and modules:
1. **Power management system**: In power management systems, the FDC636P-VB can be used as a load switch and power control element. Its low on-resistance helps reduce power loss and improve overall system efficiency. It is suitable for mobile devices, portable electronic devices and battery management systems.
2. **Low voltage inverter**: This MOSFET is suitable for low voltage inverter applications, providing stable load switching performance. It is widely used in solar inverters and small power converters to ensure efficient power conversion and reliability.
3. **Automation and control systems**: In automation and control systems, the FDC636P-VB is able to handle high current loads and is suitable for use in switch control modules in industrial automation equipment and smart home systems.
4. **LED Driver**: FDC636P-VB is also suitable for LED drivers, providing efficient current control to ensure the stability and long life of LED lighting systems, suitable for LED light strips and other high-power LED applications.
These applications demonstrate the excellent performance of FDC636P-VB in negative voltage and low current environments, making it an important component in high-efficiency electronic devices.
Due to its low on-resistance and high current handling capability, the FDC636P-VB is widely used in the following fields and modules:
1. **Power management system**: In power management systems, the FDC636P-VB can be used as a load switch and power control element. Its low on-resistance helps reduce power loss and improve overall system efficiency. It is suitable for mobile devices, portable electronic devices and battery management systems.
2. **Low voltage inverter**: This MOSFET is suitable for low voltage inverter applications, providing stable load switching performance. It is widely used in solar inverters and small power converters to ensure efficient power conversion and reliability.
3. **Automation and control systems**: In automation and control systems, the FDC636P-VB is able to handle high current loads and is suitable for use in switch control modules in industrial automation equipment and smart home systems.
4. **LED Driver**: FDC636P-VB is also suitable for LED drivers, providing efficient current control to ensure the stability and long life of LED lighting systems, suitable for LED light strips and other high-power LED applications.
These applications demonstrate the excellent performance of FDC636P-VB in negative voltage and low current environments, making it an important component in high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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