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FDC6318P-VB Product details

Product introduction:

Product Introduction

**FDC6318P-VB** is a high-performance bipolar P-channel MOSFET in SOT23-6 package. This MOSFET uses Trench technology and is designed for low-voltage and low-power applications. It supports drain-source voltage (VDS) up to -20V and gate-source voltage (VGS) of ±12V. Its on-resistance is 100mΩ at VGS = 2.5V and 75mΩ at VGS = 4.5V, providing lower power consumption characteristics. The maximum drain current (ID) of the MOSFET is -4A, which is suitable for application scenarios requiring bipolar P-channel switches.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Dual-P+P
Detailed parameter description

- **Model**: FDC6318P-VB
- **Package**: SOT23-6
- **Configuration**: Bipolar P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

1. **Load switch**:
The FDC6318P-VB is very suitable for use as a load switch due to its low on-resistance and moderate current handling capability. It can effectively control the start and stop of the load switch and is widely used in power management modules and switching power supplies, such as home appliances, computer peripherals and automation systems.

2. **Power management**:
In power management systems, the bipolar design of the FDC6318P-VB allows stable switching control in applications requiring P-channel MOSFETs. This includes battery protection circuits, power switch control, and high-efficiency battery management systems, which can provide reliable performance and low power consumption.

3. **Low voltage applications**:
Due to its supported VDS up to -20V and low threshold voltage (Vth), the FDC6318P-VB is particularly suitable for low voltage applications such as portable devices and low-power electronics. Its small package (SOT23-6) makes it ideal for space-constrained designs such as mobile devices and small circuit boards.

4. **Switching Circuits**:
In switching circuits, the low on-resistance and high current capability of the FDC6318P-VB make it an ideal choice. It can be used in applications such as motor drive, load control, and power conversion, providing high efficiency and reliable switching operation.

These application examples demonstrate the wide applicability and excellent performance of the FDC6318P-VB in load switching, power management, low voltage applications, and switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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