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FDC6308P-VB Product details
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Product Introduction
FDC6308P-VB is a high-efficiency dual P-channel power MOSFET in SOT23-6 package. It has a drain-source breakdown voltage (VDS) of -20V and a high continuous drain current (ID) of -4A. The MOSFET adopts Trench technology and has a low on-resistance of 75mΩ (VGS = 4.5V) and 100mΩ (VGS = 2.5V). These features make the FDC6308P-VB very suitable for applications that require efficient switching performance and low conduction losses.
FDC6308P-VB is a high-efficiency dual P-channel power MOSFET in SOT23-6 package. It has a drain-source breakdown voltage (VDS) of -20V and a high continuous drain current (ID) of -4A. The MOSFET adopts Trench technology and has a low on-resistance of 75mΩ (VGS = 4.5V) and 100mΩ (VGS = 2.5V). These features make the FDC6308P-VB very suitable for applications that require efficient switching performance and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual-P-Channel
- **Drain-source breakdown voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Continuous drain current (ID)**: -4A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Dual-P-Channel
- **Drain-source breakdown voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Continuous drain current (ID)**: -4A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
The characteristics of FDC6308P-VB make it excel in multiple application fields, especially in the following scenarios:
1. **Low voltage power switch**:
In low voltage power management systems, FDC6308P-VB can be used as an efficient switching element. Its low on-resistance (especially at higher VGS) helps reduce energy loss and improve overall power efficiency. It is suitable for use in low voltage power switches and load switches to ensure that current flows at high efficiency.
2. **Battery-powered devices**:
For portable and battery-powered devices such as smartphones, portable computers and mobile power supplies, FDC6308P-VB provides efficient switching capabilities and optimizes battery management. Its low on-resistance can reduce power loss and extend the battery life of the device.
3. **DC-DC Converter**:
In DC-DC converters, FDC6308P-VB can be used as a switching element to achieve efficient voltage conversion. Its low on-resistance and high current handling capability enable it to provide stable performance during the conversion process and reduce energy loss.
4. **Load Switch**:
In various load switch applications, FDC6308P-VB can be used to control the on and off of loads. Its high current capability and low on-resistance make it suitable for load control systems that require efficient switching and low power consumption.
5. **Current Limitation and Overcurrent Protection**:
Due to the low on-resistance and moderate breakdown voltage of FDC6308P-VB, it can be used as a switching element for current limiting and overcurrent protection. Used to protect circuits and modules from overcurrent damage and ensure system reliability and safety.
In summary, the FDC6308P-VB MOSFET provides excellent switching performance through its low on-resistance and moderate drain-source breakdown voltage. It is widely used in low-voltage power switches, battery-powered equipment, DC-DC converters, load switches, and overcurrent protection. It is suitable for various circuit designs that require high performance and low power consumption.
The characteristics of FDC6308P-VB make it excel in multiple application fields, especially in the following scenarios:
1. **Low voltage power switch**:
In low voltage power management systems, FDC6308P-VB can be used as an efficient switching element. Its low on-resistance (especially at higher VGS) helps reduce energy loss and improve overall power efficiency. It is suitable for use in low voltage power switches and load switches to ensure that current flows at high efficiency.
2. **Battery-powered devices**:
For portable and battery-powered devices such as smartphones, portable computers and mobile power supplies, FDC6308P-VB provides efficient switching capabilities and optimizes battery management. Its low on-resistance can reduce power loss and extend the battery life of the device.
3. **DC-DC Converter**:
In DC-DC converters, FDC6308P-VB can be used as a switching element to achieve efficient voltage conversion. Its low on-resistance and high current handling capability enable it to provide stable performance during the conversion process and reduce energy loss.
4. **Load Switch**:
In various load switch applications, FDC6308P-VB can be used to control the on and off of loads. Its high current capability and low on-resistance make it suitable for load control systems that require efficient switching and low power consumption.
5. **Current Limitation and Overcurrent Protection**:
Due to the low on-resistance and moderate breakdown voltage of FDC6308P-VB, it can be used as a switching element for current limiting and overcurrent protection. Used to protect circuits and modules from overcurrent damage and ensure system reliability and safety.
In summary, the FDC6308P-VB MOSFET provides excellent switching performance through its low on-resistance and moderate drain-source breakdown voltage. It is widely used in low-voltage power switches, battery-powered equipment, DC-DC converters, load switches, and overcurrent protection. It is suitable for various circuit designs that require high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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