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FDC6302P-VB Product details
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FDC6302P-VB MOSFET Product Introduction
The FDC6302P-VB is a high-performance bipolar P-channel power MOSFET packaged in SOT23-6. The device is manufactured using Trench technology and has a drain-source voltage (VDS) of -20V and a maximum drain current (ID) of -4A. Its on-resistance is very low, at 75mΩ (at VGS=4.5V) and 100mΩ (at VGS=2.5V), making it excel in low-voltage drive and high-current applications. Its design makes it suitable for a variety of high-efficiency switching and power management applications.
The FDC6302P-VB is a high-performance bipolar P-channel power MOSFET packaged in SOT23-6. The device is manufactured using Trench technology and has a drain-source voltage (VDS) of -20V and a maximum drain current (ID) of -4A. Its on-resistance is very low, at 75mΩ (at VGS=4.5V) and 100mΩ (at VGS=2.5V), making it excel in low-voltage drive and high-current applications. Its design makes it suitable for a variety of high-efficiency switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Bipolar P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench
- **Maximum power dissipation**: 1W
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 1100pF
- **Typical application frequency**: High frequency switching applications
- **Package type**: SOT23-6
- **Configuration**: Bipolar P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench
- **Maximum power dissipation**: 1W
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 1100pF
- **Typical application frequency**: High frequency switching applications
Domain and module applications：
Applications and module examples
1. **Low voltage power switch**
The low on-resistance and low gate threshold voltage of the FDC6302P-VB make it ideal for low voltage power switch applications. In portable devices and small power modules, this MOSFET can effectively manage power and control switching to improve the overall efficiency of the system.
2. **Power management and power modules**
In power management modules, the FDC6302P-VB is capable of handling medium current loads and is suitable for use as a switching element in DC-DC converters. Its high switching speed and low on-resistance help improve power conversion efficiency and stability.
3. **Mobile devices and portable electronics**
Due to its small SOT23-6 package and low power consumption, the FDC6302P-VB is ideal for power switching and power management applications in mobile devices and portable electronics. In these devices, it can effectively manage battery power, thereby extending battery life.
4. **LED Driver**
In LED driver applications, FDC6302P-VB can be used as a switching element for LED lamps. Its low on-resistance ensures efficient current control, which helps to improve the brightness and service life of LED lamps.
5. **Battery Protection Circuit**
FDC6302P-VB is also widely used in battery protection circuits. It can be used as a switch protection for the battery to prevent overcharge or overdischarge, and protect the battery from damage caused by abnormal current.
In general, FDC6302P-VB MOSFET can play an important role in low-voltage switching, power management, mobile devices, LED driving and battery protection with its excellent electrical performance and small package design, making it an ideal choice for various high-efficiency applications.
1. **Low voltage power switch**
The low on-resistance and low gate threshold voltage of the FDC6302P-VB make it ideal for low voltage power switch applications. In portable devices and small power modules, this MOSFET can effectively manage power and control switching to improve the overall efficiency of the system.
2. **Power management and power modules**
In power management modules, the FDC6302P-VB is capable of handling medium current loads and is suitable for use as a switching element in DC-DC converters. Its high switching speed and low on-resistance help improve power conversion efficiency and stability.
3. **Mobile devices and portable electronics**
Due to its small SOT23-6 package and low power consumption, the FDC6302P-VB is ideal for power switching and power management applications in mobile devices and portable electronics. In these devices, it can effectively manage battery power, thereby extending battery life.
4. **LED Driver**
In LED driver applications, FDC6302P-VB can be used as a switching element for LED lamps. Its low on-resistance ensures efficient current control, which helps to improve the brightness and service life of LED lamps.
5. **Battery Protection Circuit**
FDC6302P-VB is also widely used in battery protection circuits. It can be used as a switch protection for the battery to prevent overcharge or overdischarge, and protect the battery from damage caused by abnormal current.
In general, FDC6302P-VB MOSFET can play an important role in low-voltage switching, power management, mobile devices, LED driving and battery protection with its excellent electrical performance and small package design, making it an ideal choice for various high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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