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FDC610PZ-VB Product details
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Product Introduction
FDC610PZ-VB is a high-efficiency single P-channel power MOSFET packaged in SOT23-6. This MOSFET is manufactured using Trench technology and has good electrical performance. Its drain-source voltage (VDS) is -30V, which is suitable for applications requiring negative voltage control. The maximum value of the gate-source voltage (VGS) is ±20V, while the threshold voltage (Vth) is -1.7V, ensuring good switching performance. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 54mΩ, and at 10V, RDS(ON) drops to 49mΩ, and the drain continuous current (ID) is -4.8A. The small package of the FDC610PZ-VB makes it particularly suitable for compact electronic devices.
FDC610PZ-VB is a high-efficiency single P-channel power MOSFET packaged in SOT23-6. This MOSFET is manufactured using Trench technology and has good electrical performance. Its drain-source voltage (VDS) is -30V, which is suitable for applications requiring negative voltage control. The maximum value of the gate-source voltage (VGS) is ±20V, while the threshold voltage (Vth) is -1.7V, ensuring good switching performance. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 54mΩ, and at 10V, RDS(ON) drops to 49mΩ, and the drain continuous current (ID) is -4.8A. The small package of the FDC610PZ-VB makes it particularly suitable for compact electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package type**: SOT23-6
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Continuous drain current (ID)**: -4.8A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Continuous drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
The low on-resistance and small package of the FDC610PZ-VB MOSFET make it widely used in many fields:
1. **Low-power portable devices**: In portable electronic devices such as smartphones, tablets and wearable devices, the FDC610PZ-VB can provide effective switching performance in a limited space, helping to improve battery life and overall energy efficiency.
2. **Power management module**: In various power management applications such as power switching and load control, the FDC610PZ-VB can optimize power efficiency and reduce power consumption due to its excellent current handling capability and low on-resistance.
3. **Load switch**: For load switching in power systems, such as battery protection circuits and current limiting circuits, the FDC610PZ-VB can provide reliable load switching capabilities to ensure system stability and safety.
4. **Low voltage circuit**: In circuits that require negative voltage, such as reverse power converters and low voltage DC-DC converters, the FDC610PZ-VB provides the required switching performance to help maintain normal operation of the circuit.
5. **Miniaturized electronic modules**: Due to its SOT23-6 small package, the FDC610PZ-VB is particularly suitable for electronic modules with limited space, such as small circuit boards and integrated circuits, and can effectively realize compact designs.
With its excellent performance and small package, the FDC610PZ-VB has become an ideal choice for various high-performance electronic devices and systems.
The low on-resistance and small package of the FDC610PZ-VB MOSFET make it widely used in many fields:
1. **Low-power portable devices**: In portable electronic devices such as smartphones, tablets and wearable devices, the FDC610PZ-VB can provide effective switching performance in a limited space, helping to improve battery life and overall energy efficiency.
2. **Power management module**: In various power management applications such as power switching and load control, the FDC610PZ-VB can optimize power efficiency and reduce power consumption due to its excellent current handling capability and low on-resistance.
3. **Load switch**: For load switching in power systems, such as battery protection circuits and current limiting circuits, the FDC610PZ-VB can provide reliable load switching capabilities to ensure system stability and safety.
4. **Low voltage circuit**: In circuits that require negative voltage, such as reverse power converters and low voltage DC-DC converters, the FDC610PZ-VB provides the required switching performance to help maintain normal operation of the circuit.
5. **Miniaturized electronic modules**: Due to its SOT23-6 small package, the FDC610PZ-VB is particularly suitable for electronic modules with limited space, such as small circuit boards and integrated circuits, and can effectively realize compact designs.
With its excellent performance and small package, the FDC610PZ-VB has become an ideal choice for various high-performance electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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