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FDC608PZ-VB Product details
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FDC608PZ-VB MOSFET Product Introduction
FDC608PZ-VB is a high-performance single P-channel MOSFET in a SOT23-6 package, designed for low voltage and medium current applications. Its drain-source voltage (VDS) is -30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is -1.7V. The FDC608PZ-VB has excellent on-resistance (RDS(ON)), which is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and can support a drain current (ID) of up to -4.8A. Using Trench technology, this MOSFET provides efficient switching performance and low power consumption characteristics, making it ideal for electronic applications requiring high switching frequency and low power consumption.
FDC608PZ-VB is a high-performance single P-channel MOSFET in a SOT23-6 package, designed for low voltage and medium current applications. Its drain-source voltage (VDS) is -30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is -1.7V. The FDC608PZ-VB has excellent on-resistance (RDS(ON)), which is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and can support a drain current (ID) of up to -4.8A. Using Trench technology, this MOSFET provides efficient switching performance and low power consumption characteristics, making it ideal for electronic applications requiring high switching frequency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **Low voltage switch**: The FDC608PZ-VB excels in low voltage switching applications. Its low on-resistance and high switching frequency make it suitable for mobile devices, portable electronics, and small power management systems. MOSFETs can effectively switch current, reduce power consumption, and improve overall system efficiency.
2. **Battery management system**: In battery management systems, the FDC608PZ-VB is able to provide stable switching control. Its low on-resistance and high current handling capability make it suitable for battery protection circuits and battery switch control, ensuring system efficiency and reliability.
3. **Portable electronic devices**: For portable electronic devices such as mobile phones, tablets, and wearable devices, the FDC608PZ-VB is able to provide efficient switching control and low power consumption. This helps extend the battery life of the device and ensures stable performance.
4. **DC-DC converter**: The FDC608PZ-VB is suitable for load switching and synchronous rectification applications in DC-DC converters. Its low on-resistance and high switching frequency enable it to provide efficient current transfer in these converters, improving conversion efficiency.
With its high switching frequency, low on-resistance and Trench technology, the FDC608PZ-VB MOSFET is suitable for a variety of electronic applications that require efficient switching and low power consumption, providing a stable and reliable solution.
1. **Low voltage switch**: The FDC608PZ-VB excels in low voltage switching applications. Its low on-resistance and high switching frequency make it suitable for mobile devices, portable electronics, and small power management systems. MOSFETs can effectively switch current, reduce power consumption, and improve overall system efficiency.
2. **Battery management system**: In battery management systems, the FDC608PZ-VB is able to provide stable switching control. Its low on-resistance and high current handling capability make it suitable for battery protection circuits and battery switch control, ensuring system efficiency and reliability.
3. **Portable electronic devices**: For portable electronic devices such as mobile phones, tablets, and wearable devices, the FDC608PZ-VB is able to provide efficient switching control and low power consumption. This helps extend the battery life of the device and ensures stable performance.
4. **DC-DC converter**: The FDC608PZ-VB is suitable for load switching and synchronous rectification applications in DC-DC converters. Its low on-resistance and high switching frequency enable it to provide efficient current transfer in these converters, improving conversion efficiency.
With its high switching frequency, low on-resistance and Trench technology, the FDC608PZ-VB MOSFET is suitable for a variety of electronic applications that require efficient switching and low power consumption, providing a stable and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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