FDC608P-VB Product details
Product introduction:
FDC608P-VB is a high-performance P-channel MOSFET in SOT23-6 package. It is designed for low-voltage and high-efficiency applications and has a maximum drain-source voltage (VDS) of -30V. The gate-source voltage (VGS) of this MOSFET supports ±20V and the turn-on threshold voltage (Vth) is -1.7V. The on-resistance (RDS(ON)) of FDC608P-VB is 49mΩ at VGS of 10V and 54mΩ at VGS of 4.5V, supporting a drain current of up to -4.8A. Using Trench technology, FDC608P-VB provides excellent conduction performance and efficient switching performance, and is very suitable for applications requiring high power and low power consumption.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Package type**: SOT23-6
- **Polarity**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Drain current (ID)**: -4.8A
- **Technology type**: Trench
Domain and module applications:
The characteristics of FDC608P-VB make it widely used in multiple fields and modules, especially in scenarios that require low on-resistance and high efficiency:
1. **Low voltage power switch**: Due to its low on-resistance and high current capability, FDC608P-VB is very suitable for low voltage power switching. In portable devices and small power modules, it can effectively manage power switching, reduce power loss and improve system efficiency.
2. **Battery-powered devices**: In battery-powered applications such as smartphones and wearable devices, FDC608P-VB can be used as a battery switch to optimize battery management, extend the use time of the device, and ensure efficient power conversion.
3. **Motor drive circuit**: In motor drive circuits, this MOSFET can be used as an efficient switching element to control the start, stop and speed regulation of the motor. Its efficient switching performance and low on-resistance help improve the efficiency and response speed of the motor.
4. **Low-power analog switch**: The low on-resistance of FDC608P-VB makes it suitable for low-power analog switch applications. In audio and video signal switching, it can reduce signal distortion and maintain high-quality signal transmission.
5. **Consumer electronic devices**: In various consumer electronic devices, such as tablets, cameras, and portable audio systems, FDC608P-VB can be used for power management and signal switching. It helps these devices provide stable performance in different operating modes and optimize energy usage.
These application examples demonstrate the advantages of FDC608P-VB in scenarios requiring low power consumption and high efficiency. Its low on-resistance and high-efficiency switching performance enable it to perform well in multiple high-efficiency electronic applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image