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FDC606P-VB Product details
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FDB8874-VB Product Introduction
FDB8874-VB is a high-performance N-channel MOSFET in TO-263 package. This MOSFET is designed for low-voltage, high-current applications, with a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 150A. The FDB8874-VB uses Trench technology to provide extremely low on-resistance (RDS(ON)), 3.2mΩ at VGS=4.5V and 2.3mΩ at VGS=10V. This gives it extremely low power loss and excellent thermal management performance in high-current applications, making it ideal for the needs of high-efficiency electronic devices.
FDB8874-VB is a high-performance N-channel MOSFET in TO-263 package. This MOSFET is designed for low-voltage, high-current applications, with a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 150A. The FDB8874-VB uses Trench technology to provide extremely low on-resistance (RDS(ON)), 3.2mΩ at VGS=4.5V and 2.3mΩ at VGS=10V. This gives it extremely low power loss and excellent thermal management performance in high-current applications, making it ideal for the needs of high-efficiency electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
The low on-resistance and high current handling capability of FDB8874-VB make it very suitable in multiple fields and modules. The main applications include:
1. **High-power DC-DC converter**: In high-power DC-DC converters, FDB8874-VB can effectively handle high current loads, reduce power loss, and improve conversion efficiency. It is suitable for power conversion modules in computer power supplies, servers, and communication equipment.
2. **Power Management Integrated Circuit (PMIC)**: Due to its low on-resistance and high current capability, this MOSFET is very suitable for power management integrated circuits, providing stable switching performance and efficient power distribution. It is widely used in smartphones, power tools, and battery management systems.
3. **Electric vehicle control**: In electric vehicle systems, FDB8874-VB can handle high current loads, ensuring high efficiency and reliability of electric vehicle motor control systems, especially in drive motors and charging control modules.
4. **High Power LED Driver**: In high power LED driver applications, this MOSFET can provide stable current control and is suitable for LED lighting systems that require high current and low power loss, ensuring high efficiency and long life.
These applications demonstrate the superior performance of FDB8874-VB in high current and low voltage environments, making it a key component in a variety of high-efficiency electronic devices.
The low on-resistance and high current handling capability of FDB8874-VB make it very suitable in multiple fields and modules. The main applications include:
1. **High-power DC-DC converter**: In high-power DC-DC converters, FDB8874-VB can effectively handle high current loads, reduce power loss, and improve conversion efficiency. It is suitable for power conversion modules in computer power supplies, servers, and communication equipment.
2. **Power Management Integrated Circuit (PMIC)**: Due to its low on-resistance and high current capability, this MOSFET is very suitable for power management integrated circuits, providing stable switching performance and efficient power distribution. It is widely used in smartphones, power tools, and battery management systems.
3. **Electric vehicle control**: In electric vehicle systems, FDB8874-VB can handle high current loads, ensuring high efficiency and reliability of electric vehicle motor control systems, especially in drive motors and charging control modules.
4. **High Power LED Driver**: In high power LED driver applications, this MOSFET can provide stable current control and is suitable for LED lighting systems that require high current and low power loss, ensuring high efficiency and long life.
These applications demonstrate the superior performance of FDB8874-VB in high current and low voltage environments, making it a key component in a variety of high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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