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FDB8878-VB Product details
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Product Introduction
The FDB8878-VB is a high-efficiency single N-channel power MOSFET in a TO263 package. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, as well as a threshold voltage (Vth) of 1.7V. It is manufactured using advanced Trench technology, which gives it an extremely low on-resistance. Specifically, at a gate voltage of 4.5V, the on-resistance is 18mΩ; at 10V, the on-resistance is 12mΩ. The FDB8878-VB is capable of handling drain currents (ID) of up to 50A, which makes it an excellent performer in applications that require high current handling and low power consumption.
The FDB8878-VB is a high-efficiency single N-channel power MOSFET in a TO263 package. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, as well as a threshold voltage (Vth) of 1.7V. It is manufactured using advanced Trench technology, which gives it an extremely low on-resistance. Specifically, at a gate voltage of 4.5V, the on-resistance is 18mΩ; at 10V, the on-resistance is 12mΩ. The FDB8878-VB is capable of handling drain currents (ID) of up to 50A, which makes it an excellent performer in applications that require high current handling and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
The low on-resistance and high current handling capability of the FDB8878-VB MOSFET enable it to excel in a variety of high-performance and high-efficiency applications, including:
1. **DC-DC converter**: In switching power supplies and DC-DC converters, the FDB8878-VB can effectively reduce power loss and improve system efficiency, and is suitable for computer power supplies, communication equipment, and industrial power modules.
2. **Motor driver**: In motor drive circuits, the FDB8878-VB provides stable high-current switching capabilities, suitable for motor control systems in electric vehicles, power tools, and industrial automation equipment.
3. **Load switch**: In applications that require high-current switching, such as battery management and load protection circuits, the FDB8878-VB can handle currents up to 50A, providing reliable switching performance, and is suitable for use in high-power power management systems.
4. **Battery Management System**: In the battery management and protection system, FDB8878-VB can effectively manage the charging and discharging process due to its low on-resistance and high current capability, and is suitable for battery management modules of electric vehicles, power tools and various portable electronic devices.
FDB8878-VB MOSFET, with its extremely low on-resistance and high current carrying capacity, provides an ideal solution for a variety of modern high-efficiency electronic devices and systems, and is the preferred component in high-current switching applications.
The low on-resistance and high current handling capability of the FDB8878-VB MOSFET enable it to excel in a variety of high-performance and high-efficiency applications, including:
1. **DC-DC converter**: In switching power supplies and DC-DC converters, the FDB8878-VB can effectively reduce power loss and improve system efficiency, and is suitable for computer power supplies, communication equipment, and industrial power modules.
2. **Motor driver**: In motor drive circuits, the FDB8878-VB provides stable high-current switching capabilities, suitable for motor control systems in electric vehicles, power tools, and industrial automation equipment.
3. **Load switch**: In applications that require high-current switching, such as battery management and load protection circuits, the FDB8878-VB can handle currents up to 50A, providing reliable switching performance, and is suitable for use in high-power power management systems.
4. **Battery Management System**: In the battery management and protection system, FDB8878-VB can effectively manage the charging and discharging process due to its low on-resistance and high current capability, and is suitable for battery management modules of electric vehicles, power tools and various portable electronic devices.
FDB8878-VB MOSFET, with its extremely low on-resistance and high current carrying capacity, provides an ideal solution for a variety of modern high-efficiency electronic devices and systems, and is the preferred component in high-current switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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