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FDB8878-VB Product details
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FDB8878-VB MOSFET Product Introduction
FDB8878-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V. FDB8878-VB has excellent on-resistance (RDS(ON)), which is 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, and can support a drain current (ID) of up to 50A. Using Trench technology, this MOSFET provides efficient switching performance and low power consumption characteristics, which is very suitable for electronic applications requiring high current and low power consumption.
FDB8878-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V. FDB8878-VB has excellent on-resistance (RDS(ON)), which is 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, and can support a drain current (ID) of up to 50A. Using Trench technology, this MOSFET provides efficient switching performance and low power consumption characteristics, which is very suitable for electronic applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **High-efficiency power management**: FDB8878-VB is very suitable for high-efficiency power management systems. Its low RDS(ON) and high current capability make it an ideal choice for high-efficiency DC-DC converters. In power modules, it can effectively reduce power consumption and improve system efficiency, especially for power applications that require high current and low voltage.
2. **Electric vehicles**: In the motor drive and battery management system of electric vehicles, FDB8878-VB provides excellent current control and low power consumption characteristics. This MOSFET is able to support high current loads, ensuring efficient operation and reliability of electric vehicles.
3. **Industrial power**: FDB8878-VB also performs well in industrial power applications, and its high current handling capability and low on-resistance are suitable for power switches and protection circuits. This MOSFET can provide stable and reliable performance in industrial equipment and power systems.
4. **Computer power supplies and servers**: In computer power supplies and servers, the low on-resistance and high current capability of the FDB8878-VB ensure efficient current transfer and stable power supply. Its characteristics enable it to reduce power consumption and improve system stability in these high-performance applications.
With its high current handling capability, low on-resistance and advanced Trench technology, the FDB8878-VB MOSFET is suitable for a variety of electronic applications requiring high current and low power consumption, providing users with efficient and reliable solutions.
1. **High-efficiency power management**: FDB8878-VB is very suitable for high-efficiency power management systems. Its low RDS(ON) and high current capability make it an ideal choice for high-efficiency DC-DC converters. In power modules, it can effectively reduce power consumption and improve system efficiency, especially for power applications that require high current and low voltage.
2. **Electric vehicles**: In the motor drive and battery management system of electric vehicles, FDB8878-VB provides excellent current control and low power consumption characteristics. This MOSFET is able to support high current loads, ensuring efficient operation and reliability of electric vehicles.
3. **Industrial power**: FDB8878-VB also performs well in industrial power applications, and its high current handling capability and low on-resistance are suitable for power switches and protection circuits. This MOSFET can provide stable and reliable performance in industrial equipment and power systems.
4. **Computer power supplies and servers**: In computer power supplies and servers, the low on-resistance and high current capability of the FDB8878-VB ensure efficient current transfer and stable power supply. Its characteristics enable it to reduce power consumption and improve system stability in these high-performance applications.
With its high current handling capability, low on-resistance and advanced Trench technology, the FDB8878-VB MOSFET is suitable for a variety of electronic applications requiring high current and low power consumption, providing users with efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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