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FDB8870_F085-VB Product details

Product introduction:

FDB8870_F085-VB MOSFET Product Introduction

FDB8870_F085-VB is a high-performance N-channel power MOSFET with TO263 package and Trench technology. This MOSFET has a drain-source voltage (VDS) of 30V, a maximum drain current (ID) of 150A, and extremely low on-resistance, suitable for high current and high switching frequency applications. Its on-resistance at 10V gate voltage is 2.3mΩ, which makes it excellent in high-efficiency switching and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 150A 2.3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 150W
- **Switching speed**: High
- **Typical application frequency**: High frequency switching power supply
- **Input capacitance (Ciss)**: 3200pF
- **Breakdown voltage**: 30V

Domain and module applications:

Applications and module examples

1. **High-efficiency switching power supply**
FDB8870_F085-VB performs well in high-efficiency switching power supply applications. Its low on-resistance and high current handling capability make it ideal for use in high-efficiency DC-DC converters. It can reduce power loss, improve the overall efficiency of the system, and can still operate stably at high switching frequencies.

2. **Motor control system**
In motor control systems, FDB8870_F085-VB can effectively handle high current loads to ensure smooth operation of the motor. Its low on-resistance and high current capability make it an ideal choice for high-efficiency motor drives, suitable for DC motor and stepper motor control.

3. **Computer and data center power supply**
In the power supply systems of computers and data centers, FDB8870_F085-VB can be used as a high-efficiency switching element. Its high current capability and low on-resistance are suitable for meeting the strict requirements of data centers for power stability, helping to improve the performance and reliability of power supplies.

4. **Automotive Power Management**
In automotive electronic systems, FDB8870_F085-VB can be used for battery management systems and high-power motor control. Its high current capability and low on-resistance make it suitable for handling high load demands in automotive power systems, improving system efficiency and stability.

5. **High-power LED drive**
This MOSFET is also suitable for high-power LED drive applications. FDB8870_F085-VB can efficiently drive high-power LED lamps, maintain stable brightness and extend the life of LEDs, and its low on-resistance helps reduce power losses and improve system efficiency.

FDB8870_F085-VB MOSFET has a wide range of applications in high-efficiency switching power supplies, motor control, computer and data center power supplies, automotive power management, and high-power LED drives due to its excellent on-resistance and high current capability. Its high performance and reliability make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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