FDB8860_F085-VB Product details
Product introduction:
FDB8860_F085-VB is a high-performance single N-channel power MOSFET in TO263 package. It has a drain-source breakdown voltage (VDS) of 30V and a high continuous drain current (ID) of 150A. Using Trench technology, FDB8860_F085-VB achieves an extremely low on-resistance (RDS(ON)) of 2.3mΩ at VGS = 10V. This feature makes it ideal for high-current applications such as power management and load switching. Its excellent performance makes it an ideal choice for applications that require high efficiency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications:
The low on-resistance and high current capability of FDB8860_F085-VB enable it to excel in multiple fields. Here are some typical application scenarios:
1. **DC-DC converter**:
In DC-DC converters, the low on-resistance of FDB8860_F085-VB ensures efficient energy conversion. Its high current handling capability makes it ideal for use in high-efficiency power supply modules such as computer power supplies, server power supplies, and power management circuits in communication equipment. Reducing on-resistance can significantly improve converter efficiency and reduce energy losses.
2. **Battery management system**:
For battery management systems, FDB8860_F085-VB is an ideal choice because it can handle high currents while maintaining low power consumption. This is especially important in electric vehicles, power tools, and other high-current battery systems, helping to improve battery charging and discharging efficiency and extend battery life.
3. **Motor Drive**:
In motor control applications, the high current carrying capacity and low on-resistance of this MOSFET make it suitable for driving DC motors and stepper motors. FDB8860_F085-VB can provide stable current control, reduce power consumption, and improve the efficiency and response speed of motor drive systems.
4. **High Power Load Switch**:
FDB8860_F085-VB is suitable for high power load switching applications such as power distribution and load protection circuits. Its low on-resistance helps reduce power consumption and heat during switching, and is suitable for high power load scenarios that require efficient switching performance.
5. **Power Switch Module**:
In the power switch module, FDB8860_F085-VB can handle high current loads and provide stable switching performance. Its ultra-low on-resistance reduces power consumption, and is suitable for high power power switching and protection circuits to ensure efficient and reliable operation of the system.
In summary, the FDB8860_F085-VB MOSFET provides superior performance in applications such as power management, battery systems, motor drives, and load switches through its high current handling capability and low on-resistance, and is suitable for a variety of high-efficiency and high-reliability application scenarios.
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