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FDB8453LZ-VB Product details
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FDB8453LZ-VB MOSFET Product Introduction
FDB8453LZ-VB is a high-performance N-channel power MOSFET with TO263 package type and Trench technology. The MOSFET has a drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 100A. Its on-resistance (RDS(ON)) is 5mΩ at a gate voltage of 10V, showing extremely low switching losses and high efficiency. The FDB8453LZ-VB is designed for high current and low voltage applications, and is suitable for various power management and switching applications that require high efficiency and stability.
FDB8453LZ-VB is a high-performance N-channel power MOSFET with TO263 package type and Trench technology. The MOSFET has a drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 100A. Its on-resistance (RDS(ON)) is 5mΩ at a gate voltage of 10V, showing extremely low switching losses and high efficiency. The FDB8453LZ-VB is designed for high current and low voltage applications, and is suitable for various power management and switching applications that require high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 200W
- **Switching speed**: High
- **Typical application frequency**: High frequency switching power supply
- **Input capacitance (Ciss)**: 4500pF
- **Breakdown voltage**: 40V
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 200W
- **Switching speed**: High
- **Typical application frequency**: High frequency switching power supply
- **Input capacitance (Ciss)**: 4500pF
- **Breakdown voltage**: 40V
Domain and module applications：
Applications and module examples
1. **High-efficiency power management**
The FDB8453LZ-VB performs well in high-efficiency power management systems, especially in applications that require high current handling capabilities. Its low on-resistance and high current capability make it suitable for applications such as DC-DC converters and power conditioning modules, helping to improve the efficiency and stability of power systems.
2. **Motor drive systems**
This MOSFET is suitable for motor drive systems, capable of handling high current loads and ensuring smooth operation of the motor. Its excellent on-resistance and current handling capabilities make it stable and reliable in motor control and drive applications.
3. **Computer and data center power supplies**
In the power systems of computers and data centers, the FDB8453LZ-VB can be used as an efficient switching element to help improve power conversion efficiency. Its low on-resistance and high current capability can meet the stringent requirements of data centers for high-performance power supplies.
4. **Automotive power system**
In the field of automotive electronics, FDB8453LZ-VB can be used in automotive battery management and motor control systems. Its high current capability and low on-resistance are suitable for handling high load current requirements in automobiles, improving the efficiency and reliability of automotive power systems.
5. **High-power LED driver**
FDB8453LZ-VB is suitable for high-power LED driver applications. Its low on-resistance and high current capability enable it to efficiently drive high-power LED lamps, ensuring stable brightness and long life.
Due to its extremely low on-resistance and high current capability, FDB8453LZ-VB MOSFET has a wide range of applications in many fields such as efficient power management, motor drive, computer and data center power supply, automotive power system, and high-power LED drive. Its high performance and reliability make it an ideal choice for these applications.
1. **High-efficiency power management**
The FDB8453LZ-VB performs well in high-efficiency power management systems, especially in applications that require high current handling capabilities. Its low on-resistance and high current capability make it suitable for applications such as DC-DC converters and power conditioning modules, helping to improve the efficiency and stability of power systems.
2. **Motor drive systems**
This MOSFET is suitable for motor drive systems, capable of handling high current loads and ensuring smooth operation of the motor. Its excellent on-resistance and current handling capabilities make it stable and reliable in motor control and drive applications.
3. **Computer and data center power supplies**
In the power systems of computers and data centers, the FDB8453LZ-VB can be used as an efficient switching element to help improve power conversion efficiency. Its low on-resistance and high current capability can meet the stringent requirements of data centers for high-performance power supplies.
4. **Automotive power system**
In the field of automotive electronics, FDB8453LZ-VB can be used in automotive battery management and motor control systems. Its high current capability and low on-resistance are suitable for handling high load current requirements in automobiles, improving the efficiency and reliability of automotive power systems.
5. **High-power LED driver**
FDB8453LZ-VB is suitable for high-power LED driver applications. Its low on-resistance and high current capability enable it to efficiently drive high-power LED lamps, ensuring stable brightness and long life.
Due to its extremely low on-resistance and high current capability, FDB8453LZ-VB MOSFET has a wide range of applications in many fields such as efficient power management, motor drive, computer and data center power supply, automotive power system, and high-power LED drive. Its high performance and reliability make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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