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FDB8447L-VB Product details
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Product Introduction
The FDB8447L-VB is a high-performance single N-channel power MOSFET in TO263 package. Designed for high current and high-efficiency applications, this MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V and it is manufactured using advanced Trench technology with very low on-resistance: 6mΩ at a gate voltage of 4.5V and 5mΩ at 10V. The FDB8447L-VB can handle drain currents (ID) of up to 100A, making it an excellent performer in high current switching and high-efficiency applications.
The FDB8447L-VB is a high-performance single N-channel power MOSFET in TO263 package. Designed for high current and high-efficiency applications, this MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V and it is manufactured using advanced Trench technology with very low on-resistance: 6mΩ at a gate voltage of 4.5V and 5mΩ at 10V. The FDB8447L-VB can handle drain currents (ID) of up to 100A, making it an excellent performer in high current switching and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The high current handling capability and low on-resistance of FDB8447L-VB MOSFET make it widely used in many fields and modules. Specific examples are as follows:
1. **Power converter**: In high-power DC-DC converters and switching power supply modules, FDB8447L-VB can effectively reduce power loss and improve system efficiency due to its low on-resistance. It is very suitable for computer power supplies, communication equipment and industrial power supply systems.
2. **Motor driver**: Used in motor drive circuits, the high current handling capability and low on-resistance of FDB8447L-VB ensure efficient and stable operation of the motor, and is suitable for motor control systems in electric vehicles, power tools and automation equipment.
3. **Load switch**: In load switch applications that require high current switching, FDB8447L-VB provides excellent switching performance and low conduction loss, and is widely used in high-power power management, battery switching and load protection circuits.
4. **Battery Management System**: In the battery protection and management system, FDB8447L-VB can effectively manage the high current charging and discharging process to ensure the safety and efficiency of the battery. It is suitable for battery management modules of electric vehicles, power tools and portable electronic devices.
FDB8447L-VB MOSFET provides excellent performance in applications such as high-efficiency power management, motor control and load switching with its extremely low on-resistance and high current carrying capacity. It is an ideal choice for modern high current and high power systems.
The high current handling capability and low on-resistance of FDB8447L-VB MOSFET make it widely used in many fields and modules. Specific examples are as follows:
1. **Power converter**: In high-power DC-DC converters and switching power supply modules, FDB8447L-VB can effectively reduce power loss and improve system efficiency due to its low on-resistance. It is very suitable for computer power supplies, communication equipment and industrial power supply systems.
2. **Motor driver**: Used in motor drive circuits, the high current handling capability and low on-resistance of FDB8447L-VB ensure efficient and stable operation of the motor, and is suitable for motor control systems in electric vehicles, power tools and automation equipment.
3. **Load switch**: In load switch applications that require high current switching, FDB8447L-VB provides excellent switching performance and low conduction loss, and is widely used in high-power power management, battery switching and load protection circuits.
4. **Battery Management System**: In the battery protection and management system, FDB8447L-VB can effectively manage the high current charging and discharging process to ensure the safety and efficiency of the battery. It is suitable for battery management modules of electric vehicles, power tools and portable electronic devices.
FDB8447L-VB MOSFET provides excellent performance in applications such as high-efficiency power management, motor control and load switching with its extremely low on-resistance and high current carrying capacity. It is an ideal choice for modern high current and high power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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