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FDB8447L-262-VB Product details
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FDB8447L-262-VB MOSFET Product Introduction
FDB8447L-262-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and low voltage applications. Its drain-source voltage (VDS) is 40V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 2.5V. FDB8447L-262-VB has an extremely low on-resistance (RDS(ON)), which is 5mΩ at VGS=10V, and can support a drain current (ID) of up to 100A. Using Trench technology, this MOSFET provides excellent switching performance and low power consumption characteristics, and is very suitable for high current, high power electronic applications.
FDB8447L-262-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and low voltage applications. Its drain-source voltage (VDS) is 40V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 2.5V. FDB8447L-262-VB has an extremely low on-resistance (RDS(ON)), which is 5mΩ at VGS=10V, and can support a drain current (ID) of up to 100A. Using Trench technology, this MOSFET provides excellent switching performance and low power consumption characteristics, and is very suitable for high current, high power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **High-power power switch**: FDB8447L-262-VB performs well in high-power power switch applications. Its low RDS(ON) and high current handling capability enable it to efficiently switch current in power management modules, reducing power consumption and improving system efficiency. It is particularly suitable for high-efficiency switching power supplies and high-power DC-DC converters.
2. **Electric vehicles**: In electric vehicles, the high current capability and low on-resistance of this MOSFET make it suitable for motor drives and battery management systems. FDB8447L-262-VB can provide stable current control to ensure efficient operation and energy management of electric vehicles.
3. **Industrial power supply**: FDB8447L-262-VB is also an ideal choice in industrial power applications. Its high current handling capability and low power consumption make it suitable for power switches and protection circuits. This MOSFET can provide reliable performance in a variety of industrial equipment and power systems.
4. **Server Power**: In server power systems, the low on-resistance and high current capability of the FDB8447L-262-VB ensure efficient current transfer and stable power supply. It helps reduce power consumption and improve system stability and reliability in these high-performance applications.
With its high current handling capability, low on-resistance and advanced Trench technology, the FDB8447L-262-VB MOSFET is suitable for a variety of electronic applications that require high current and low voltage, providing an efficient and reliable solution.
1. **High-power power switch**: FDB8447L-262-VB performs well in high-power power switch applications. Its low RDS(ON) and high current handling capability enable it to efficiently switch current in power management modules, reducing power consumption and improving system efficiency. It is particularly suitable for high-efficiency switching power supplies and high-power DC-DC converters.
2. **Electric vehicles**: In electric vehicles, the high current capability and low on-resistance of this MOSFET make it suitable for motor drives and battery management systems. FDB8447L-262-VB can provide stable current control to ensure efficient operation and energy management of electric vehicles.
3. **Industrial power supply**: FDB8447L-262-VB is also an ideal choice in industrial power applications. Its high current handling capability and low power consumption make it suitable for power switches and protection circuits. This MOSFET can provide reliable performance in a variety of industrial equipment and power systems.
4. **Server Power**: In server power systems, the low on-resistance and high current capability of the FDB8447L-262-VB ensure efficient current transfer and stable power supply. It helps reduce power consumption and improve system stability and reliability in these high-performance applications.
With its high current handling capability, low on-resistance and advanced Trench technology, the FDB8447L-262-VB MOSFET is suitable for a variety of electronic applications that require high current and low voltage, providing an efficient and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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