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FDB8445 F085-VB Product details
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FDB8445 F085-VB Product Introduction
FDB8445 F085-VB is a high-performance N-channel MOSFET in TO-263 package. Designed for low voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 40V and a drain current (ID) of up to 100A. FDB8445 F085-VB uses ultra-low on-resistance Trench technology, providing extremely low on-resistance (RDS(ON)), 6mΩ at VGS=4.5V and 5mΩ at VGS=10V. This gives it extremely low power loss and excellent thermal management performance in high current applications.
FDB8445 F085-VB is a high-performance N-channel MOSFET in TO-263 package. Designed for low voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 40V and a drain current (ID) of up to 100A. FDB8445 F085-VB uses ultra-low on-resistance Trench technology, providing extremely low on-resistance (RDS(ON)), 6mΩ at VGS=4.5V and 5mΩ at VGS=10V. This gives it extremely low power loss and excellent thermal management performance in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
The low on-resistance and high current handling capability of FDB8445 F085-VB make it very suitable for multiple fields and modules. The main applications include:
1. **Power Management Module (PMIC)**: In power management integrated circuits, FDB8445 F085-VB can efficiently handle large currents and provide stable switching performance, suitable for high-efficiency power conversion and power distribution.
2. **High-power DC-DC converter**: Due to its low on-resistance and high current capability, this MOSFET is particularly suitable for DC-DC converters, which can effectively reduce power loss and improve conversion efficiency. It is suitable for computer power supplies, power tools and battery management systems.
3. **Electric vehicle control**: In the motor control and battery management system of electric vehicles, FDB8445 F085-VB can handle high current loads, ensuring the high efficiency and reliability of electric vehicle systems, especially in drive motors and charging control modules.
4. **High Power LED Driver**: In high power LED driver applications, this MOSFET can provide stable current control and is suitable for LED lighting systems that require high current and low power loss, ensuring high efficiency and long life.
These applications demonstrate the superior performance of FDB8445 F085-VB in high current and low voltage environments, making it a key component in a variety of high-efficiency electronic devices.
The low on-resistance and high current handling capability of FDB8445 F085-VB make it very suitable for multiple fields and modules. The main applications include:
1. **Power Management Module (PMIC)**: In power management integrated circuits, FDB8445 F085-VB can efficiently handle large currents and provide stable switching performance, suitable for high-efficiency power conversion and power distribution.
2. **High-power DC-DC converter**: Due to its low on-resistance and high current capability, this MOSFET is particularly suitable for DC-DC converters, which can effectively reduce power loss and improve conversion efficiency. It is suitable for computer power supplies, power tools and battery management systems.
3. **Electric vehicle control**: In the motor control and battery management system of electric vehicles, FDB8445 F085-VB can handle high current loads, ensuring the high efficiency and reliability of electric vehicle systems, especially in drive motors and charging control modules.
4. **High Power LED Driver**: In high power LED driver applications, this MOSFET can provide stable current control and is suitable for LED lighting systems that require high current and low power loss, ensuring high efficiency and long life.
These applications demonstrate the superior performance of FDB8445 F085-VB in high current and low voltage environments, making it a key component in a variety of high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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