FDB8443_F085-VB Product details
Product introduction:
FDB8443_F085-VB is a high-performance single N-channel power MOSFET in TO263 package. This MOSFET has a drain-source breakdown voltage (VDS) of 40V and a high continuous drain current (ID) of 150A. Utilizing Trench technology, it achieves an extremely low on-resistance (RDS(ON)), reaching 2mΩ at VGS = 10V. These features enable FDB8443_F085-VB to excel in high-current, high-efficiency power management and load switching applications. It is particularly suitable for scenarios that require high switching speeds and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications:
The low on-resistance and high current capability of FDB8443_F085-VB enable it to excel in multiple application fields. Here are some typical application scenarios:
1. **DC-DC converter**:
In DC-DC converters, the ultra-low on-resistance of FDB8443_F085-VB ensures efficient power conversion and reduces energy loss. This makes it very suitable for use in high-efficiency power supply modules such as computer power supplies, server power supplies, and power management circuits in high-performance communication equipment.
2. **Battery management system**:
Due to its high current carrying capacity, FDB8443_F085-VB is an ideal choice in battery management systems. It can stably handle the high current generated during battery charging and discharging, and is suitable for battery management systems in electric vehicles, power tools, and portable electronic devices, ensuring efficient and safe operation of the system.
3. **Motor drive**:
In motor control systems, the high current handling capability and low on-resistance of this MOSFET make it suitable for driving applications of DC motors and stepper motors. FDB8443_F085-VB can provide stable current control, reduce energy loss, and improve the efficiency and reliability of motor drive systems.
4. **High power load switch**:
FDB8443_F085-VB is suitable for high power load switching applications such as power distribution and load protection circuits. Its low on-resistance helps reduce power consumption and heat during switching, and is suitable for scenarios that require efficient switching performance.
5. **Power switch module**:
In the power switch module, FDB8443_F085-VB is able to handle high current loads and provide stable switching performance. Its extremely low on-resistance helps reduce power consumption, and is suitable for high power power switching and protection circuits, ensuring efficient and stable operation of the system.
In general, the FDB8443_F085-VB MOSFET provides superior performance in power management, battery systems, motor drives, and load switches with its high current capability and low on-resistance, and is suitable for a variety of high-efficiency and high-reliability application scenarios.
Technical support:
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