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FDB8443_F085-VB Product details

Product introduction:

Product Introduction

FDB8443_F085-VB is a high-performance single N-channel power MOSFET in TO263 package. This MOSFET has a drain-source breakdown voltage (VDS) of 40V and a high continuous drain current (ID) of 150A. Utilizing Trench technology, it achieves an extremely low on-resistance (RDS(ON)), reaching 2mΩ at VGS = 10V. These features enable FDB8443_F085-VB to excel in high-current, high-efficiency power management and load switching applications. It is particularly suitable for scenarios that require high switching speeds and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

The low on-resistance and high current capability of FDB8443_F085-VB enable it to excel in multiple application fields. Here are some typical application scenarios:

1. **DC-DC converter**:
In DC-DC converters, the ultra-low on-resistance of FDB8443_F085-VB ensures efficient power conversion and reduces energy loss. This makes it very suitable for use in high-efficiency power supply modules such as computer power supplies, server power supplies, and power management circuits in high-performance communication equipment.

2. **Battery management system**:
Due to its high current carrying capacity, FDB8443_F085-VB is an ideal choice in battery management systems. It can stably handle the high current generated during battery charging and discharging, and is suitable for battery management systems in electric vehicles, power tools, and portable electronic devices, ensuring efficient and safe operation of the system.

3. **Motor drive**:
In motor control systems, the high current handling capability and low on-resistance of this MOSFET make it suitable for driving applications of DC motors and stepper motors. FDB8443_F085-VB can provide stable current control, reduce energy loss, and improve the efficiency and reliability of motor drive systems.

4. **High power load switch**:
FDB8443_F085-VB is suitable for high power load switching applications such as power distribution and load protection circuits. Its low on-resistance helps reduce power consumption and heat during switching, and is suitable for scenarios that require efficient switching performance.

5. **Power switch module**:
In the power switch module, FDB8443_F085-VB is able to handle high current loads and provide stable switching performance. Its extremely low on-resistance helps reduce power consumption, and is suitable for high power power switching and protection circuits, ensuring efficient and stable operation of the system.

In general, the FDB8443_F085-VB MOSFET provides superior performance in power management, battery systems, motor drives, and load switches with its high current capability and low on-resistance, and is suitable for a variety of high-efficiency and high-reliability application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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