FDB8441_F085-VB Product details
Product introduction:
FDB8441_F085-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The MOSFET has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. FDB8441_F085-VB has a very low on-resistance (RDS(ON)), which is 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, and supports a drain current (ID) of up to 150A. Using advanced Trench technology, FDB8441_F085-VB provides excellent switching performance and extremely low power consumption, and is particularly suitable for applications requiring high current and low loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications:
1. **High-efficiency power management**: FDB8441_F085-VB excels in high-efficiency power management systems. Its ultra-low RDS(ON) and high current handling capability make it an ideal choice for high-efficiency DC-DC converters, which can reduce power consumption during power conversion and improve overall system efficiency. Suitable for a variety of high-performance power modules and switching power supply applications.
2. **Electric vehicles**: In electric vehicles, the high current capability and low on-resistance of FDB8441_F085-VB make it suitable for motor drives and battery management systems. This MOSFET can provide stable current control, ensuring efficient operation and energy management of electric vehicles.
3. **Industrial power**: In industrial power applications, the high current handling capability and low power consumption characteristics of this MOSFET make it suitable for power switches and protection circuits. FDB8441_F085-VB can be used in a variety of industrial equipment and power systems, providing reliable performance and efficient power management.
4. **Computer power supplies and servers**: In computer power supplies and servers, the low RDS(ON) characteristics and high current capability of FDB8441_F085-VB ensure efficient current transmission and stable power supply. It helps reduce power consumption and improve system stability in these applications.
FDB8441_F085-VB MOSFET is suitable for a variety of high current and low voltage electronic applications with its excellent current handling capability, extremely low on-resistance and advanced Trench technology, providing users with efficient and reliable solutions.
Technical support:
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