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FDB8441_F085-VB Product details

Product introduction:

FDB8441_F085-VB MOSFET Product Introduction

FDB8441_F085-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The MOSFET has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. FDB8441_F085-VB has a very low on-resistance (RDS(ON)), which is 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, and supports a drain current (ID) of up to 150A. Using advanced Trench technology, FDB8441_F085-VB provides excellent switching performance and extremely low power consumption, and is particularly suitable for applications requiring high current and low loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench

Domain and module applications:

Applications and modules

1. **High-efficiency power management**: FDB8441_F085-VB excels in high-efficiency power management systems. Its ultra-low RDS(ON) and high current handling capability make it an ideal choice for high-efficiency DC-DC converters, which can reduce power consumption during power conversion and improve overall system efficiency. Suitable for a variety of high-performance power modules and switching power supply applications.

2. **Electric vehicles**: In electric vehicles, the high current capability and low on-resistance of FDB8441_F085-VB make it suitable for motor drives and battery management systems. This MOSFET can provide stable current control, ensuring efficient operation and energy management of electric vehicles.

3. **Industrial power**: In industrial power applications, the high current handling capability and low power consumption characteristics of this MOSFET make it suitable for power switches and protection circuits. FDB8441_F085-VB can be used in a variety of industrial equipment and power systems, providing reliable performance and efficient power management.

4. **Computer power supplies and servers**: In computer power supplies and servers, the low RDS(ON) characteristics and high current capability of FDB8441_F085-VB ensure efficient current transmission and stable power supply. It helps reduce power consumption and improve system stability in these applications.

FDB8441_F085-VB MOSFET is suitable for a variety of high current and low voltage electronic applications with its excellent current handling capability, extremely low on-resistance and advanced Trench technology, providing users with efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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