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FDB8160_F085-VB Product details
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Product Introduction: FDB8160_F085-VB
FDB8160_F085-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage, high current applications. This MOSFET has a maximum drain-source voltage (VDS) of 30V, suitable for a variety of low voltage circuits. Its gate-source voltage (VGS) can reach a maximum of ±20V, and the turn-on threshold voltage (Vth) is 1.7V. When VGS is 10V, the on-resistance (RDS(ON)) is as low as 2.3mΩ, and when VGS is 4.5V, it is 3.2mΩ, supporting a drain current of up to 150A. FDB8160_F085-VB uses Trench technology, with extremely low on-resistance and excellent switching performance, which is very suitable for application scenarios requiring high current and low power consumption.
FDB8160_F085-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage, high current applications. This MOSFET has a maximum drain-source voltage (VDS) of 30V, suitable for a variety of low voltage circuits. Its gate-source voltage (VGS) can reach a maximum of ±20V, and the turn-on threshold voltage (Vth) is 1.7V. When VGS is 10V, the on-resistance (RDS(ON)) is as low as 2.3mΩ, and when VGS is 4.5V, it is 3.2mΩ, supporting a drain current of up to 150A. FDB8160_F085-VB uses Trench technology, with extremely low on-resistance and excellent switching performance, which is very suitable for application scenarios requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The design of FDB8160_F085-VB makes it excel in high current and low voltage applications, and is suitable for the following fields and modules:
1. **High-efficiency power switch**: Due to its ultra-low on-resistance (2.3mΩ), FDB8160_F085-VB is an ideal choice for high-efficiency power switches, especially in DC-DC converters and switching power supplies. This low on-resistance can effectively reduce power consumption and heat, and improve the overall efficiency of the power system.
2. **Electric vehicles and battery management systems (BMS)**: In electric vehicles and BMS, the high current capability (150A) of this MOSFET is ideal for battery charge and discharge control. It is able to provide a stable current during battery management while reducing power consumption, extending battery life and improving system efficiency.
3. **Power Tools**: For power tool applications that require high current and low power consumption, the high current handling capability and low on-resistance of the FDB8160_F085-VB make it suitable for motor drive and power management, providing higher efficiency and longer service life.
4. **Computer and Communication Equipment**: In computer and communication equipment, this MOSFET can be used as an efficient power switch, providing low-loss high-current switching capability. Its low on-resistance can effectively reduce power loss and maintain system stability and performance.
5. **Industrial Control**: In industrial control systems, the FDB8160_F085-VB can be used in applications such as load switching and motor control. Its high current handling capability and low power consumption ensure efficient operation and reliability of the system.
These application examples demonstrate the key role of the FDB8160_F085-VB in high current, low voltage switching applications. Its low on-resistance and excellent switching performance enable it to play an important role in multiple high-efficiency occasions.
The design of FDB8160_F085-VB makes it excel in high current and low voltage applications, and is suitable for the following fields and modules:
1. **High-efficiency power switch**: Due to its ultra-low on-resistance (2.3mΩ), FDB8160_F085-VB is an ideal choice for high-efficiency power switches, especially in DC-DC converters and switching power supplies. This low on-resistance can effectively reduce power consumption and heat, and improve the overall efficiency of the power system.
2. **Electric vehicles and battery management systems (BMS)**: In electric vehicles and BMS, the high current capability (150A) of this MOSFET is ideal for battery charge and discharge control. It is able to provide a stable current during battery management while reducing power consumption, extending battery life and improving system efficiency.
3. **Power Tools**: For power tool applications that require high current and low power consumption, the high current handling capability and low on-resistance of the FDB8160_F085-VB make it suitable for motor drive and power management, providing higher efficiency and longer service life.
4. **Computer and Communication Equipment**: In computer and communication equipment, this MOSFET can be used as an efficient power switch, providing low-loss high-current switching capability. Its low on-resistance can effectively reduce power loss and maintain system stability and performance.
5. **Industrial Control**: In industrial control systems, the FDB8160_F085-VB can be used in applications such as load switching and motor control. Its high current handling capability and low power consumption ensure efficient operation and reliability of the system.
These application examples demonstrate the key role of the FDB8160_F085-VB in high current, low voltage switching applications. Its low on-resistance and excellent switching performance enable it to play an important role in multiple high-efficiency occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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