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FDB7N80-VB Product details
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FDB7N80-VB Product Introduction
FDB7N80-VB is a high voltage N-channel MOSFET in TO-263 package. Designed to handle high voltage applications, this MOSFET has a drain-source voltage (VDS) of 800V and high current handling capability. FDB7N80-VB uses Super Junction technology to maintain a low on-resistance (RDS(ON)) in a high voltage environment, thereby achieving higher power efficiency and lower power consumption. Its on-resistance is 160mΩ at VGS=10V, ensuring lower power consumption and efficient thermal management.
FDB7N80-VB is a high voltage N-channel MOSFET in TO-263 package. Designed to handle high voltage applications, this MOSFET has a drain-source voltage (VDS) of 800V and high current handling capability. FDB7N80-VB uses Super Junction technology to maintain a low on-resistance (RDS(ON)) in a high voltage environment, thereby achieving higher power efficiency and lower power consumption. Its on-resistance is 160mΩ at VGS=10V, ensuring lower power consumption and efficient thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ_Multi-EPI)
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ_Multi-EPI)
Domain and module applications：
Applications and Modules
The high voltage and high current capabilities of the FDB7N80-VB enable it to excel in multiple fields and modules, and is particularly suitable for the following applications:
1. **High Voltage Switching Power Supply (SMPS)**: In high voltage switching power supply applications, the FDB7N80-VB is capable of handling voltages up to 800V, suitable for high-efficiency power converters. Its low on-resistance helps reduce power loss and heat generation, improving the efficiency and reliability of the overall power system.
2. **Industrial Motor Drive**: In industrial motor drive systems, the high voltage withstand capability of the FDB7N80-VB enables it to withstand higher voltage surges, making it suitable for high-power motor control and drive applications, ensuring stable system operation.
3. **Power Inverter**: In power inverter systems, this MOSFET is able to effectively handle high voltage inputs and provide stable switching performance. Its excellent current handling capability and low on-resistance make it outstanding in solar inverters and wind power generation systems.
4. **High-power lighting control**: In high-power LED drivers and lighting control systems, the FDB7N80-VB is able to handle high voltages and ensure efficient switching performance, making it suitable for lighting applications that require high current and high voltage, such as high-power LED lighting systems and stage lighting control.
These applications demonstrate the superior performance of the FDB7N80-VB in high-voltage and high-power environments, making it a key component in multiple high-efficiency electronic devices.
The high voltage and high current capabilities of the FDB7N80-VB enable it to excel in multiple fields and modules, and is particularly suitable for the following applications:
1. **High Voltage Switching Power Supply (SMPS)**: In high voltage switching power supply applications, the FDB7N80-VB is capable of handling voltages up to 800V, suitable for high-efficiency power converters. Its low on-resistance helps reduce power loss and heat generation, improving the efficiency and reliability of the overall power system.
2. **Industrial Motor Drive**: In industrial motor drive systems, the high voltage withstand capability of the FDB7N80-VB enables it to withstand higher voltage surges, making it suitable for high-power motor control and drive applications, ensuring stable system operation.
3. **Power Inverter**: In power inverter systems, this MOSFET is able to effectively handle high voltage inputs and provide stable switching performance. Its excellent current handling capability and low on-resistance make it outstanding in solar inverters and wind power generation systems.
4. **High-power lighting control**: In high-power LED drivers and lighting control systems, the FDB7N80-VB is able to handle high voltages and ensure efficient switching performance, making it suitable for lighting applications that require high current and high voltage, such as high-power LED lighting systems and stage lighting control.
These applications demonstrate the superior performance of the FDB7N80-VB in high-voltage and high-power environments, making it a key component in multiple high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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