FDB6690S-VB Product details
Product introduction:
The FDB6690S-VB is a high-performance single N-channel power MOSFET in a TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of 30V, supports a gate-source voltage (VGS) of ±20V, and has a threshold voltage (Vth) of 1.7V. Manufactured using Trench technology, the FDB6690S-VB provides very low on-resistance, specifically 18mΩ (at VGS=4.5V) and 12mΩ (at VGS=10V). It is capable of handling drain currents (ID) of up to 50A, making it an excellent performer in applications requiring efficient power switching and low power consumption. This MOSFET is widely used in power supplies and drive circuits that require high current and low conduction losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications:
The high current handling capability and low on-resistance of the FDB6690S-VB MOSFET enable it to excel in multiple areas and modules, and is suitable for the following applications:
1. **Power Converter**: In DC-DC converters and switching power modules, the low on-resistance of the FDB6690S-VB reduces power losses and improves overall efficiency. This makes it an ideal choice for high-efficiency power supply designs, suitable for use in portable electronic devices and high-efficiency power supply systems.
2. **Motor Drive**: For small motor control and drive systems, the FDB6690S-VB is able to handle currents up to 50A, ensuring stable and efficient motor operation, and is suitable for use in power tools, electric vehicles, and various industrial motor applications.
3. **Load Switch**: In load switching circuits, especially where high current switching capability and low power consumption are required, the low on-resistance of the FDB6690S-VB provides ideal switching performance for applications such as power switching, load switching, etc.
4. **Battery Management System**: In the battery protection and management system, FDB6690S-VB can be used for high-current battery switches and protection circuits to ensure safe battery charging and discharging and extend battery life. It is suitable for battery management modules of various consumer electronics and power tools.
The low on-resistance and high current handling capability of FDB6690S-VB MOSFET make it excellent in high-efficiency power management, drive circuits and load switch applications, and can meet the needs of modern electronic devices for efficient and reliable current control.
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