中文
English
FDB6676-VB Product details
Back to previous pageProduct introduction：
FDB6676-VB MOSFET Product Introduction
FDB6676-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. The MOSFET has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V, allowing it to be efficiently turned on at a low gate-source voltage. The on-resistance (RDS(ON)) of FDB6676-VB is very low, 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, and can support a maximum drain current (ID) of 98A. Using advanced Trench technology, FDB6676-VB provides excellent switching performance and low power consumption characteristics, suitable for electronic applications that require high current handling and low power consumption.
FDB6676-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. The MOSFET has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V, allowing it to be efficiently turned on at a low gate-source voltage. The on-resistance (RDS(ON)) of FDB6676-VB is very low, 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, and can support a maximum drain current (ID) of 98A. Using advanced Trench technology, FDB6676-VB provides excellent switching performance and low power consumption characteristics, suitable for electronic applications that require high current handling and low power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **High-efficiency power switch**: FDB6676-VB performs well in high-efficiency power switch applications. Its low RDS(ON) value and high current handling capability enable it to reduce power consumption and heat generation in high-efficiency power management modules, and is widely used in high-efficiency power converters and switching power supplies.
2. **Electric Vehicle**: In electric vehicle applications, the low on-resistance and high current capability of the FDB6676-VB MOSFET make it ideal for motor drives and battery management systems. It can effectively control the flow of current, providing reliable performance and energy efficiency.
3. **DC-DC Converter**: This MOSFET is suitable for the design of low-voltage DC-DC converters, and its low on-resistance ensures efficient energy transfer during the conversion process, reducing energy losses. It performs well in portable devices, computer power supplies, and other applications that require efficient voltage conversion.
4. **Power Management System**: In power management systems, the high current handling capability and low power consumption of FDB6676-VB make it an ideal choice. It is suitable for use in high-performance power modules, battery protection circuits and other systems that require precise power management to ensure system stability and efficiency.
FDB6676-VB MOSFET, with its excellent current handling capability, low on-resistance and efficient Trench technology, is suitable for a variety of low-voltage, high-current application scenarios, providing an efficient and reliable solution.
1. **High-efficiency power switch**: FDB6676-VB performs well in high-efficiency power switch applications. Its low RDS(ON) value and high current handling capability enable it to reduce power consumption and heat generation in high-efficiency power management modules, and is widely used in high-efficiency power converters and switching power supplies.
2. **Electric Vehicle**: In electric vehicle applications, the low on-resistance and high current capability of the FDB6676-VB MOSFET make it ideal for motor drives and battery management systems. It can effectively control the flow of current, providing reliable performance and energy efficiency.
3. **DC-DC Converter**: This MOSFET is suitable for the design of low-voltage DC-DC converters, and its low on-resistance ensures efficient energy transfer during the conversion process, reducing energy losses. It performs well in portable devices, computer power supplies, and other applications that require efficient voltage conversion.
4. **Power Management System**: In power management systems, the high current handling capability and low power consumption of FDB6676-VB make it an ideal choice. It is suitable for use in high-performance power modules, battery protection circuits and other systems that require precise power management to ensure system stability and efficiency.
FDB6676-VB MOSFET, with its excellent current handling capability, low on-resistance and efficient Trench technology, is suitable for a variety of low-voltage, high-current application scenarios, providing an efficient and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
