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FDB6670S-VB Product details

Product introduction:

Product Introduction: FDB6670S-VB

FDB6670S-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for a variety of low voltage circuits. Its gate-source voltage (VGS) can reach up to ±20V, and the turn-on threshold voltage (Vth) is 1.7V. When VGS is 10V, its on-resistance (RDS(ON)) is only 2.4mΩ, and when VGS is 4.5V, it is 2.7mΩ, supporting a drain current of up to 98A. FDB6670S-VB uses Trench technology, with extremely low on-resistance and excellent switching performance, suitable for applications requiring high current and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench

Domain and module applications:

Application fields and modules

The high current handling capability and low on-resistance of FDB6670S-VB make it widely used in multiple fields and modules:

1. **High-efficiency power switch**: In high-efficiency power switch applications, the extremely low on-resistance (2.4mΩ) of FDB6670S-VB can significantly reduce power loss and improve power efficiency. It is suitable for switch control in power management systems, such as DC-DC converters and switching power supplies.

2. **Electric vehicles and battery management systems (BMS)**: In electric vehicles and BMS, the high current capability (98A) of FDB6670S-VB enables it to efficiently handle battery charging and discharging tasks while maintaining low power loss, ensuring the stability and efficiency of the battery system.

3. **Power tools**: In high-current power tools, the high drain current handling capability and low on-resistance of this MOSFET make it ideal for motor drive and power control, providing reliable performance and efficient power management.

4. **Computer and communication equipment**: In power management modules for computer and communication equipment, the FDB6670S-VB is able to effectively control current, reduce power consumption and improve system stability. Its low on-resistance makes it excel in these high-performance applications.

5. **Industrial control**: In industrial control systems, the FDB6670S-VB can be used in high-current switching applications such as load switching and motor control. Its high current handling capability and low power consumption ensure efficient operation and reliability of the system.

These applications demonstrate the importance of the FDB6670S-VB in low-voltage, high-current switching applications, where its low on-resistance and high current capability make it play a key role in multiple high-performance areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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