FDB6670S-VB Product details
Product introduction:
FDB6670S-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for a variety of low voltage circuits. Its gate-source voltage (VGS) can reach up to ±20V, and the turn-on threshold voltage (Vth) is 1.7V. When VGS is 10V, its on-resistance (RDS(ON)) is only 2.4mΩ, and when VGS is 4.5V, it is 2.7mΩ, supporting a drain current of up to 98A. FDB6670S-VB uses Trench technology, with extremely low on-resistance and excellent switching performance, suitable for applications requiring high current and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench
Domain and module applications:
The high current handling capability and low on-resistance of FDB6670S-VB make it widely used in multiple fields and modules:
1. **High-efficiency power switch**: In high-efficiency power switch applications, the extremely low on-resistance (2.4mΩ) of FDB6670S-VB can significantly reduce power loss and improve power efficiency. It is suitable for switch control in power management systems, such as DC-DC converters and switching power supplies.
2. **Electric vehicles and battery management systems (BMS)**: In electric vehicles and BMS, the high current capability (98A) of FDB6670S-VB enables it to efficiently handle battery charging and discharging tasks while maintaining low power loss, ensuring the stability and efficiency of the battery system.
3. **Power tools**: In high-current power tools, the high drain current handling capability and low on-resistance of this MOSFET make it ideal for motor drive and power control, providing reliable performance and efficient power management.
4. **Computer and communication equipment**: In power management modules for computer and communication equipment, the FDB6670S-VB is able to effectively control current, reduce power consumption and improve system stability. Its low on-resistance makes it excel in these high-performance applications.
5. **Industrial control**: In industrial control systems, the FDB6670S-VB can be used in high-current switching applications such as load switching and motor control. Its high current handling capability and low power consumption ensure efficient operation and reliability of the system.
These applications demonstrate the importance of the FDB6670S-VB in low-voltage, high-current switching applications, where its low on-resistance and high current capability make it play a key role in multiple high-performance areas.
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