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FDB6670BL-VB Product details
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FDB6670BL-VB Product Introduction
FDB6670BL-VB is a high-performance N-channel MOSFET in TO-263 package. This MOSFET is specially designed for low voltage and high current applications, with extremely low on-resistance and high drain current capability. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, FDB6670BL-VB is suitable for use in applications requiring high switching efficiency and low power loss. Its low on-resistance (RDS(ON)) is only 2.4mΩ at VGS=10V, giving it excellent performance and thermal management capabilities in high current applications.
FDB6670BL-VB is a high-performance N-channel MOSFET in TO-263 package. This MOSFET is specially designed for low voltage and high current applications, with extremely low on-resistance and high drain current capability. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, FDB6670BL-VB is suitable for use in applications requiring high switching efficiency and low power loss. Its low on-resistance (RDS(ON)) is only 2.4mΩ at VGS=10V, giving it excellent performance and thermal management capabilities in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The low on-resistance and high current capability of the FDB6670BL-VB enable it to excel in a variety of fields and modules, especially in the following applications:
1. **High-efficiency power management**: In high-efficiency DC-DC converters and power management systems, the FDB6670BL-VB can provide high current handling capability with extremely low on-resistance, improve power conversion efficiency, and reduce power loss, suitable for power design that requires high efficiency.
2. **Motor drive**: This MOSFET performs well in motor drive applications, especially in motor control systems that require high current and high switching frequency. Its low on-resistance reduces heat generation and improves system reliability and performance.
3. **Switching power supply (SMPS)**: In switching power modules, the FDB6670BL-VB can provide low on-resistance and high current handling capability, suitable for high-efficiency power conversion applications, optimizing system efficiency and reducing heat loss.
4. **Battery Management System (BMS)**: FDB6670BL-VB is suitable for battery management systems, especially in battery protection circuits that require fast switching and high current handling. Its excellent performance ensures battery safety and stability, especially in high-performance battery packs.
These applications demonstrate the advantages of FDB6670BL-VB in environments that require high performance and low power consumption, making it an ideal choice for multiple high-current, high-efficiency electronic devices.
The low on-resistance and high current capability of the FDB6670BL-VB enable it to excel in a variety of fields and modules, especially in the following applications:
1. **High-efficiency power management**: In high-efficiency DC-DC converters and power management systems, the FDB6670BL-VB can provide high current handling capability with extremely low on-resistance, improve power conversion efficiency, and reduce power loss, suitable for power design that requires high efficiency.
2. **Motor drive**: This MOSFET performs well in motor drive applications, especially in motor control systems that require high current and high switching frequency. Its low on-resistance reduces heat generation and improves system reliability and performance.
3. **Switching power supply (SMPS)**: In switching power modules, the FDB6670BL-VB can provide low on-resistance and high current handling capability, suitable for high-efficiency power conversion applications, optimizing system efficiency and reducing heat loss.
4. **Battery Management System (BMS)**: FDB6670BL-VB is suitable for battery management systems, especially in battery protection circuits that require fast switching and high current handling. Its excellent performance ensures battery safety and stability, especially in high-performance battery packs.
These applications demonstrate the advantages of FDB6670BL-VB in environments that require high performance and low power consumption, making it an ideal choice for multiple high-current, high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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