FDB6670AS-VB Product details
Product introduction:
**FDB6670AS-VB** is a high-efficiency N-Channel MOSFET in TO263 package. Designed for low voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. It uses Trench technology and has extremely low on-resistance (RDS(ON)) and a drain-source current (ID) of up to 98A. The excellent performance of FDB6670AS-VB makes it very suitable for applications such as high-efficiency power switches, battery management and load switches.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: FDB6670AS-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain-source current (ID)**: 98A
- **Technology**: Trench
Domain and module applications:
1. **High-efficiency switching power supply**: FDB6670AS-VB excels in high-efficiency switching power supply design. Its extremely low on-resistance and high current carrying capacity make it very suitable for use in DC-DC converters, AC-DC adapters, and power modules, which can effectively reduce power loss and improve system efficiency. It is widely used in computer power supplies, mobile device power supplies, and various power management systems.
2. **Load switch**: Due to its high current capability and low on-resistance, FDB6670AS-VB is an ideal choice for load switch applications. It can efficiently switch high-current loads and is commonly used in home appliances, automation equipment, and power control modules to ensure system stability and reliability.
3. **Battery management system**: In battery management systems, FDB6670AS-VB's low on-resistance and high current handling capability enable it to provide efficient battery protection and management. It is suitable for use in various portable devices and electric vehicles to ensure safe battery charging and discharging and optimize battery life and performance.
4. **Motor Drive**: This MOSFET performs well in motor control applications. Its high current handling capability enables it to effectively drive motors, and is suitable for applications such as power tools, robots, and small appliances, providing stable power control and efficient motor drive capabilities.
5. **Automotive Electronics**: The FDB6670AS-VB also performs well in automotive electronics applications, especially in low-voltage systems. Its high efficiency and low on-resistance make it suitable for applications such as on-board power management, battery protection, and low-voltage lighting systems, enhancing the reliability and stability of automotive systems.
The high efficiency and low power consumption characteristics of the FDB6670AS-VB enable it to provide excellent performance in a variety of low-voltage, high-current applications, making it an ideal choice for achieving high efficiency and stability in the system.
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