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FDB6670AL-VB Product details

Product introduction:

Product Introduction

**FDB6670AL-VB** is a high-performance N-Channel MOSFET in a TO263 package. It is designed for low voltage, high current applications with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET uses Trench technology to provide very low on-resistance (RDS(ON)) and up to 98A of drain-source current (ID). FDB6670AL-VB is particularly suitable for applications that require high performance and low power consumption, such as high-efficiency power switches and battery management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Model**: FDB6670AL-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain-source current (ID)**: 98A
- **Technology**: Trench

Domain and module applications:

Applications and modules

1. **High-efficiency switching power supply**: FDB6670AL-VB performs well in switching power supplies. Its extremely low on-resistance and high current handling capability make it an ideal choice for high-efficiency power switches. It can achieve high-efficiency power conversion in DC-DC converters, reduce power losses, and improve the performance and stability of the overall system. It is widely used in computer power supplies, power adapters, and power modules.

2. **Load switch**: In load switch applications, the high current capability and low on-resistance of FDB6670AL-VB enable it to efficiently control and switch high-current loads. It is suitable for switch control in various electronic devices, such as home appliances, automation equipment, and power conditioning modules.

3. **Battery management system**: Due to its low on-resistance and high current capability, this MOSFET is an ideal choice in battery management systems. It can provide high-efficiency switching in battery protection circuits and charging management, ensuring a stable charging and discharging process, and is suitable for battery management in smartphones, electric vehicles, and various portable devices.

4. **Motor Drive**: In small motor drive applications that require high current control, the excellent performance of the FDB6670AL-VB enables it to effectively drive motors. It is suitable for applications such as power tools, robots, and small appliances, providing stable power control and efficient driving capabilities.

5. **Automotive Electronics**: The FDB6670AL-VB is also suitable for low-voltage applications in automotive electronic systems. Its high current carrying capacity and low on-resistance enable it to perform well in on-board electronic devices such as on-board chargers, power management modules, and low-voltage lighting systems, improving system reliability and efficiency.

The high efficiency and low power consumption of the FDB6670AL-VB enable it to provide excellent performance in a variety of low-voltage, high-current applications, especially in applications that require efficient power conversion and load control, making it an ideal choice for achieving system high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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