FDB603AL-VB Product details
Product introduction:
FDB603AL-VB is a high-efficiency single N-channel MOSFET in TO263 package, suitable for low voltage and high current applications. The drain-source voltage (VDS) of this MOSFET is 30V, with a gate drive voltage range of ±20V. The on-resistance is 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, and the maximum drain current is 50A. FDB603AL-VB uses advanced Trench technology to optimize switching performance and on-resistance, ensuring excellent performance in high power density applications, and is ideal for high-efficiency power supplies and current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
- **Switching speed**: Suitable for high-frequency circuits with fast switching response
- **Power consumption**: Low conduction loss, optimized thermal management performance, suitable for high-density applications
Domain and module applications:
FDB603AL-VB MOSFET is very suitable for multiple low voltage and high current application scenarios due to its low on-resistance and high current carrying capacity. Here are some specific application examples:
1. **DC-DC converter**: FDB603AL-VB performs well in DC-DC converters, especially suitable for efficient voltage conversion and current control, and can provide stable power management under low voltage and high current conditions, suitable for various portable electronic devices and battery-powered systems.
2. **Motor drive control**: This MOSFET is suitable for low voltage motor drive control, such as drone motor control systems and small electric vehicle motor control units. The low on-resistance of FDB603AL-VB enables it to efficiently transmit current and provide precise motor control.
3. **Power Management Module (PMU)**: In the power management module, FDB603AL-VB can be used as a switching element to optimize power conversion efficiency and reduce power consumption, which is suitable for mobile devices, tablets and other portable power management systems.
4. **High Power LED Driver**: In the high power LED driver, FDB603AL-VB provides low conduction loss and fast response time to ensure the stability and high efficiency of LED lighting, which is suitable for LED applications that require high current drive, such as automotive LED lighting and architectural lighting.
5. **Load Switch Application**: Due to its low on-resistance and high current capability, FDB603AL-VB is also suitable for various load switch applications, such as battery management system (BMS) and current control modules in communication equipment.
Through the examples of these application fields, FDB603AL-VB demonstrates its wide applicability and high efficiency in low voltage and high current scenarios, and is a reliable choice for engineers in power design and current control.
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