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FDB6030PL-VB Product details
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Product Introduction
The FDB6030PL-VB is a high-efficiency single N-channel power MOSFET in TO263 package. It has a drain-source voltage (VDS) of 30V, supports a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. The device uses advanced Trench technology to provide extremely low on-resistance, with RDS(ON) of 18mΩ at a gate voltage of 4.5V and 12mΩ at 10V. The FDB6030PL-VB can withstand drain currents (ID) of up to 50A, making it ideal for low-voltage, high-current applications, especially in applications that require fast switching and efficient power conversion.
The FDB6030PL-VB is a high-efficiency single N-channel power MOSFET in TO263 package. It has a drain-source voltage (VDS) of 30V, supports a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. The device uses advanced Trench technology to provide extremely low on-resistance, with RDS(ON) of 18mΩ at a gate voltage of 4.5V and 12mΩ at 10V. The FDB6030PL-VB can withstand drain currents (ID) of up to 50A, making it ideal for low-voltage, high-current applications, especially in applications that require fast switching and efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
FDB6030PL-VB MOSFET is widely used in many fields that require efficient current control and switching with its low on-resistance and high current handling capability, including:
1. **Power management**: In power management applications such as DC-DC converters and load switches, the low on-resistance and fast switching speed of FDB6030PL-VB can significantly improve conversion efficiency and reduce power loss, suitable for high-efficiency power supply design.
2. **Motor control**: Suitable for small motor drives and servo control systems, these applications require fast response and precise control, FDB6030PL-VB can provide high current handling capability and stable performance to ensure smooth operation of the motor.
3. **Battery protection and management system**: In the battery protection circuit of mobile devices and power tools, FDB6030PL-VB can effectively manage the battery charging and discharging process to ensure battery safety and service life.
4. **Consumer Electronics**: For power management modules in electronic devices such as smartphones and tablets, the FDB6030PL-VB can help extend battery life and improve overall device performance due to its low power consumption and high efficiency.
The FDB6030PL-VB MOSFET performs well in multiple fields and modules, and is particularly suitable for low-voltage applications that require high performance, low power consumption, and high current handling.
FDB6030PL-VB MOSFET is widely used in many fields that require efficient current control and switching with its low on-resistance and high current handling capability, including:
1. **Power management**: In power management applications such as DC-DC converters and load switches, the low on-resistance and fast switching speed of FDB6030PL-VB can significantly improve conversion efficiency and reduce power loss, suitable for high-efficiency power supply design.
2. **Motor control**: Suitable for small motor drives and servo control systems, these applications require fast response and precise control, FDB6030PL-VB can provide high current handling capability and stable performance to ensure smooth operation of the motor.
3. **Battery protection and management system**: In the battery protection circuit of mobile devices and power tools, FDB6030PL-VB can effectively manage the battery charging and discharging process to ensure battery safety and service life.
4. **Consumer Electronics**: For power management modules in electronic devices such as smartphones and tablets, the FDB6030PL-VB can help extend battery life and improve overall device performance due to its low power consumption and high efficiency.
The FDB6030PL-VB MOSFET performs well in multiple fields and modules, and is particularly suitable for low-voltage applications that require high performance, low power consumption, and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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