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FDB6030L-VB Product details
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FDB6030L-VB MOSFET Product Introduction
FDB6030L-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V, enabling it to be efficiently turned on at low gate voltage. The FDB6030L-VB has an extremely low on-resistance (RDS(ON)), which is 8mΩ at VGS=4.5V and 6mΩ at VGS=10V, and can support a maximum drain current (ID) of 70A. This MOSFET uses advanced Trench technology to ensure its high efficiency and low power consumption in switching applications, making it ideal for applications requiring low loss and high power handling.
FDB6030L-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V, enabling it to be efficiently turned on at low gate voltage. The FDB6030L-VB has an extremely low on-resistance (RDS(ON)), which is 8mΩ at VGS=4.5V and 6mΩ at VGS=10V, and can support a maximum drain current (ID) of 70A. This MOSFET uses advanced Trench technology to ensure its high efficiency and low power consumption in switching applications, making it ideal for applications requiring low loss and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **Low voltage DC-DC converters**: The FDB6030L-VB excels in low voltage DC-DC converters and is particularly suitable for conversion applications that require low on-resistance and high current handling capability. Its low RDS(ON) characteristics reduce switching losses and improve conversion efficiency, making it suitable for scenarios such as portable devices and communication equipment.
2. **Power tools and power modules**: In power tools and power modules, the high current handling capability and low on-resistance of the FDB6030L-VB ensure efficient energy transfer and stable operation of the tools. Its 30V VDS makes it suitable for low voltage power modules, providing reliable current control.
3. **Automotive electronics**: Applications of the FDB6030L-VB in automotive electronics include battery management systems and motor control modules. Its low Vth and efficient Trench technology enable fast response and switching in battery-powered systems while maintaining low power consumption.
4. **Battery management and protection circuit**: In the battery management and protection circuit, FDB6030L-VB MOSFET provides a low-loss, high-efficiency solution. Its low on-resistance characteristic ensures efficient use of battery power and protects the battery from overcurrent or overvoltage damage.
FDB6030L-VB MOSFET is very suitable for electronic systems that require low power consumption and high efficiency due to its low voltage, high current characteristics and efficient Trench technology. It is widely used in power management, automotive electronics, consumer electronics and other fields.
1. **Low voltage DC-DC converters**: The FDB6030L-VB excels in low voltage DC-DC converters and is particularly suitable for conversion applications that require low on-resistance and high current handling capability. Its low RDS(ON) characteristics reduce switching losses and improve conversion efficiency, making it suitable for scenarios such as portable devices and communication equipment.
2. **Power tools and power modules**: In power tools and power modules, the high current handling capability and low on-resistance of the FDB6030L-VB ensure efficient energy transfer and stable operation of the tools. Its 30V VDS makes it suitable for low voltage power modules, providing reliable current control.
3. **Automotive electronics**: Applications of the FDB6030L-VB in automotive electronics include battery management systems and motor control modules. Its low Vth and efficient Trench technology enable fast response and switching in battery-powered systems while maintaining low power consumption.
4. **Battery management and protection circuit**: In the battery management and protection circuit, FDB6030L-VB MOSFET provides a low-loss, high-efficiency solution. Its low on-resistance characteristic ensures efficient use of battery power and protects the battery from overcurrent or overvoltage damage.
FDB6030L-VB MOSFET is very suitable for electronic systems that require low power consumption and high efficiency due to its low voltage, high current characteristics and efficient Trench technology. It is widely used in power management, automotive electronics, consumer electronics and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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