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FDB6030BL-VB Product details
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FDB6030BL-VB Product Introduction
FDB6030BL-VB is a high-efficiency N-channel MOSFET in TO-263 package, designed for low voltage, high current applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET is very suitable for use in low voltage applications. The FDB6030BL-VB uses advanced Trench technology to achieve low on-resistance, especially only 12mΩ at VGS=10V. This MOSFET also has a high drain current (ID) capability of 50A, which is very suitable for high-performance applications that require high current handling.
FDB6030BL-VB is a high-efficiency N-channel MOSFET in TO-263 package, designed for low voltage, high current applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET is very suitable for use in low voltage applications. The FDB6030BL-VB uses advanced Trench technology to achieve low on-resistance, especially only 12mΩ at VGS=10V. This MOSFET also has a high drain current (ID) capability of 50A, which is very suitable for high-performance applications that require high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The FDB6030BL-VB MOSFET is suitable for several key areas and modules due to its low voltage, high current and low on-resistance:
1. **Power management system**: This MOSFET is suitable for low-voltage DC-DC converters, regulators and power management units (PMUs). It can efficiently handle high currents and maintain low power losses, ensuring efficient and reliable operation of the power system.
2. **Motor drive**: The FDB6030BL-VB is very suitable for use in low-voltage motor drives, especially in applications that require fast switching and high current drive. It can provide strong driving force while maintaining low heat loss.
3. **Switching power supply (SMPS)**: In the switching power supply module, the FDB6030BL-VB's efficient switching performance and low on-resistance enable it to improve conversion efficiency, and is suitable for power supply designs with high efficiency and heat dissipation requirements.
4. **Battery Management System (BMS)**: This MOSFET is also suitable for battery management systems, especially in the charge and discharge management and protection circuits of lithium battery packs, which can effectively manage large current flows and ensure battery safety and stability.
These application scenarios demonstrate the excellent performance of FDB6030BL-VB in low voltage and high current environments, making it an ideal choice for efficient power management and drive systems.
The FDB6030BL-VB MOSFET is suitable for several key areas and modules due to its low voltage, high current and low on-resistance:
1. **Power management system**: This MOSFET is suitable for low-voltage DC-DC converters, regulators and power management units (PMUs). It can efficiently handle high currents and maintain low power losses, ensuring efficient and reliable operation of the power system.
2. **Motor drive**: The FDB6030BL-VB is very suitable for use in low-voltage motor drives, especially in applications that require fast switching and high current drive. It can provide strong driving force while maintaining low heat loss.
3. **Switching power supply (SMPS)**: In the switching power supply module, the FDB6030BL-VB's efficient switching performance and low on-resistance enable it to improve conversion efficiency, and is suitable for power supply designs with high efficiency and heat dissipation requirements.
4. **Battery Management System (BMS)**: This MOSFET is also suitable for battery management systems, especially in the charge and discharge management and protection circuits of lithium battery packs, which can effectively manage large current flows and ensure battery safety and stability.
These application scenarios demonstrate the excellent performance of FDB6030BL-VB in low voltage and high current environments, making it an ideal choice for efficient power management and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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