中文
English
FDB6021P-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**FDB6021P-VB** is a high-performance P-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high current and high efficiency applications. It can withstand a maximum drain-source voltage (VDS) of -30V and provides a low on-resistance (RDS(ON)) of 8mΩ at VGS = 10V and 11mΩ at VGS = 4.5V. This makes the FDB6021P-VB have excellent conductivity and low power consumption in negative voltage applications. Its maximum drain current (ID) is -75A and the threshold voltage (Vth) is -2.5V, ensuring that it can still switch stably at a lower gate-source voltage.
**FDB6021P-VB** is a high-performance P-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high current and high efficiency applications. It can withstand a maximum drain-source voltage (VDS) of -30V and provides a low on-resistance (RDS(ON)) of 8mΩ at VGS = 10V and 11mΩ at VGS = 4.5V. This makes the FDB6021P-VB have excellent conductivity and low power consumption in negative voltage applications. Its maximum drain current (ID) is -75A and the threshold voltage (Vth) is -2.5V, ensuring that it can still switch stably at a lower gate-source voltage.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: FDB6021P-VB
- **Package**: TO263
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench
- **Model**: FDB6021P-VB
- **Package**: TO263
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Load switch**:
FDB6021P-VB is well suited for load switch applications due to its low on-resistance and high current capability. It provides low power consumption and stable switching operation in applications where high-efficiency load switching is required, such as power switches and battery management systems.
2. **DC-DC converter**:
In DC-DC converters, FDB6021P-VB can be used as a P-channel MOSFET for efficient power conversion and regulation. Its high current handling capability and low on-resistance give it good performance in power management, ensuring efficient and stable operation of the converter.
3. **Motor drive**:
FDB6021P-VB is suitable for negative switching in motor drive modules. Its high current capability and low on-resistance enable it to reliably handle the high current load of the motor, providing smooth motor control and drive.
4. **Power Protection**:
In power protection circuits, such as overcurrent protection and short circuit protection, FDB6021P-VB can be used as a high current switching element. Its low RDS(ON) and high current capability ensure fast response and protection of the power supply under abnormal conditions.
These application examples demonstrate the excellent performance of FDB6021P-VB in handling negative voltage, high current load and high efficiency requirements, making it excellent in load switching, DC-DC converters, motor drives and power protection.
1. **Load switch**:
FDB6021P-VB is well suited for load switch applications due to its low on-resistance and high current capability. It provides low power consumption and stable switching operation in applications where high-efficiency load switching is required, such as power switches and battery management systems.
2. **DC-DC converter**:
In DC-DC converters, FDB6021P-VB can be used as a P-channel MOSFET for efficient power conversion and regulation. Its high current handling capability and low on-resistance give it good performance in power management, ensuring efficient and stable operation of the converter.
3. **Motor drive**:
FDB6021P-VB is suitable for negative switching in motor drive modules. Its high current capability and low on-resistance enable it to reliably handle the high current load of the motor, providing smooth motor control and drive.
4. **Power Protection**:
In power protection circuits, such as overcurrent protection and short circuit protection, FDB6021P-VB can be used as a high current switching element. Its low RDS(ON) and high current capability ensure fast response and protection of the power supply under abnormal conditions.
These application examples demonstrate the excellent performance of FDB6021P-VB in handling negative voltage, high current load and high efficiency requirements, making it excellent in load switching, DC-DC converters, motor drives and power protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
