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FDB52N20TM-VB Product details
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Product Introduction
FDB52N20TM-VB is a high-performance single N-channel power MOSFET in TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of up to 200V and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and it uses Trench technology to provide low on-resistance and excellent switching performance. The FDB52N20TM-VB has an on-resistance of 38mΩ at a gate voltage of 10V and can handle a drain current (ID) of up to 45A. This design enables it to have excellent performance in high-voltage, high-current applications, and is suitable for applications requiring high efficiency and low power consumption.
FDB52N20TM-VB is a high-performance single N-channel power MOSFET in TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of up to 200V and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and it uses Trench technology to provide low on-resistance and excellent switching performance. The FDB52N20TM-VB has an on-resistance of 38mΩ at a gate voltage of 10V and can handle a drain current (ID) of up to 45A. This design enables it to have excellent performance in high-voltage, high-current applications, and is suitable for applications requiring high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ@VGS=10V
- **Continuous drain current (ID)**: 45A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ@VGS=10V
- **Continuous drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The high voltage and high current handling capabilities of the FDB52N20TM-VB MOSFET make it suitable for a variety of applications and modules, including:
1. **High Voltage Power Management**: In high voltage power management applications, such as high voltage DC-DC converters and switch mode power supplies (SMPS), the high withstand voltage capability and low on-resistance of the FDB52N20TM-VB enable it to effectively manage and convert electrical energy and provide stable power output.
2. **Motor Drive Systems**: In motor drive systems, such as electric vehicles, power tools, and industrial motors, the FDB52N20TM-VB can handle higher voltage and current loads, ensuring efficient operation and reliability of the motor, and is suitable for motor drive and inverter applications.
3. **Power Amplifier**: In power amplifier applications, such as high power audio systems and communication equipment, the FDB52N20TM-VB is able to provide low power consumption and high efficiency switching control, reducing power loss and improving overall system performance.
4. **Battery Management System**: In the battery management system, including battery protection and charging control circuits, the FDB52N20TM-VB can withstand higher voltages and provide reliable switch control to ensure the safety and efficient charging of the battery system.
FDB52N20TM-VB MOSFET is widely used in various high-voltage electronic devices and systems that require high efficiency and low power consumption due to its high voltage tolerance, low on-resistance and high current handling capability.
The high voltage and high current handling capabilities of the FDB52N20TM-VB MOSFET make it suitable for a variety of applications and modules, including:
1. **High Voltage Power Management**: In high voltage power management applications, such as high voltage DC-DC converters and switch mode power supplies (SMPS), the high withstand voltage capability and low on-resistance of the FDB52N20TM-VB enable it to effectively manage and convert electrical energy and provide stable power output.
2. **Motor Drive Systems**: In motor drive systems, such as electric vehicles, power tools, and industrial motors, the FDB52N20TM-VB can handle higher voltage and current loads, ensuring efficient operation and reliability of the motor, and is suitable for motor drive and inverter applications.
3. **Power Amplifier**: In power amplifier applications, such as high power audio systems and communication equipment, the FDB52N20TM-VB is able to provide low power consumption and high efficiency switching control, reducing power loss and improving overall system performance.
4. **Battery Management System**: In the battery management system, including battery protection and charging control circuits, the FDB52N20TM-VB can withstand higher voltages and provide reliable switch control to ensure the safety and efficient charging of the battery system.
FDB52N20TM-VB MOSFET is widely used in various high-voltage electronic devices and systems that require high efficiency and low power consumption due to its high voltage tolerance, low on-resistance and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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