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FDB44N25TM-VB Product details
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FDB44N25TM-VB MOSFET Product Introduction
FDB44N25TM-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, and it can be turned on at a lower gate-source voltage, making it suitable for high current switching. The on-resistance (RDS(ON)) of FDB44N25TM-VB is 40mΩ, and it performs well at a gate-source voltage of 10V, capable of supporting a maximum drain current (ID) of 60A. Using Trench technology, it provides excellent switching performance and low power consumption, making it suitable for applications requiring high current and high efficiency.
FDB44N25TM-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, and it can be turned on at a lower gate-source voltage, making it suitable for high current switching. The on-resistance (RDS(ON)) of FDB44N25TM-VB is 40mΩ, and it performs well at a gate-source voltage of 10V, capable of supporting a maximum drain current (ID) of 60A. Using Trench technology, it provides excellent switching performance and low power consumption, making it suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **High voltage DC-DC converter**: FDB44N25TM-VB excels in high voltage DC-DC converters. Its 250V drain-source voltage and 40mΩ low on-resistance enable it to handle current conversion in high voltage applications, providing efficient power conversion and stable performance.
2. **Power management system**: In power management systems, FDB44N25TM-VB is able to meet high current and medium voltage requirements. Its maximum 60A drain current capability and low power consumption make it suitable for high power power management, ensuring efficient and stable operation of the system.
3. **High current switching applications**: This MOSFET is suitable for applications that require high current switching control. The high current handling capability and stable switching performance of FDB44N25TM-VB enable it to efficiently control large current loads and is widely used in various power switching modules.
4. **Power conversion module**: In the power conversion module, the high current handling capability and low on-resistance of FDB44N25TM-VB help reduce switching losses and improve conversion efficiency. It is suitable for motor drive, power control and high-power switching applications, providing a reliable switching solution.
With its high current handling capability, low power consumption and efficient switching performance, FDB44N25TM-VB MOSFET is suitable for a variety of medium voltage and high current application scenarios, providing a stable and reliable solution to meet the needs of complex systems.
1. **High voltage DC-DC converter**: FDB44N25TM-VB excels in high voltage DC-DC converters. Its 250V drain-source voltage and 40mΩ low on-resistance enable it to handle current conversion in high voltage applications, providing efficient power conversion and stable performance.
2. **Power management system**: In power management systems, FDB44N25TM-VB is able to meet high current and medium voltage requirements. Its maximum 60A drain current capability and low power consumption make it suitable for high power power management, ensuring efficient and stable operation of the system.
3. **High current switching applications**: This MOSFET is suitable for applications that require high current switching control. The high current handling capability and stable switching performance of FDB44N25TM-VB enable it to efficiently control large current loads and is widely used in various power switching modules.
4. **Power conversion module**: In the power conversion module, the high current handling capability and low on-resistance of FDB44N25TM-VB help reduce switching losses and improve conversion efficiency. It is suitable for motor drive, power control and high-power switching applications, providing a reliable switching solution.
With its high current handling capability, low power consumption and efficient switching performance, FDB44N25TM-VB MOSFET is suitable for a variety of medium voltage and high current application scenarios, providing a stable and reliable solution to meet the needs of complex systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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