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FDB4020P-VB Product details
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FDB4020P-VB Product Introduction
FDB4020P-VB is a high-performance P-channel MOSFET in TO-263 package. This MOSFET is designed for negative voltage environments and has a drain-source voltage (VDS) of -60V, making it suitable for use under negative voltage conditions. The FDB4020P-VB uses Trench technology, with lower on-resistance and a drain current (ID) of up to -35A. Its on-resistance is 48mΩ at VGS=10V, providing excellent switching performance and low power loss. This gives the FDB4020P-VB excellent efficiency and reliability in negative voltage applications.
FDB4020P-VB is a high-performance P-channel MOSFET in TO-263 package. This MOSFET is designed for negative voltage environments and has a drain-source voltage (VDS) of -60V, making it suitable for use under negative voltage conditions. The FDB4020P-VB uses Trench technology, with lower on-resistance and a drain current (ID) of up to -35A. Its on-resistance is 48mΩ at VGS=10V, providing excellent switching performance and low power loss. This gives the FDB4020P-VB excellent efficiency and reliability in negative voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Drain current (ID)**: -35A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Drain current (ID)**: -35A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The negative voltage capability and low on-resistance of the FDB4020P-VB MOSFET enable it to excel in multiple application areas. The following are examples of the application of this MOSFET in different fields and modules:
1. **Negative power management**: In negative power management systems, the FDB4020P-VB can handle negative voltages up to -60V, making it suitable for negative power switches and protection circuits. Its low on-resistance ensures efficient power conversion and management, reducing power losses.
2. **Negative voltage power converter**: In negative voltage power converters, such as negative voltage DC-DC converters, the high current capability and low on-resistance of the FDB4020P-VB improve the efficiency and reliability of the converter, making it suitable for applications requiring high performance and high efficiency.
3. **Motor drive system**: In motor drive systems that require negative voltage control, this MOSFET can provide stable high current support, making it suitable for motor control and drive under negative voltage, ensuring system stability and high efficiency.
4. **Negative voltage switching circuit**: In the negative voltage switching circuit, the high current capability and low on-resistance of FDB4020P-VB make it suitable for high-efficiency negative voltage switching, and can achieve stable switching performance in negative voltage environment.
These application examples show the excellent performance of FDB4020P-VB in negative voltage and high current environment, making it a key component in high-efficiency negative voltage electronic systems.
The negative voltage capability and low on-resistance of the FDB4020P-VB MOSFET enable it to excel in multiple application areas. The following are examples of the application of this MOSFET in different fields and modules:
1. **Negative power management**: In negative power management systems, the FDB4020P-VB can handle negative voltages up to -60V, making it suitable for negative power switches and protection circuits. Its low on-resistance ensures efficient power conversion and management, reducing power losses.
2. **Negative voltage power converter**: In negative voltage power converters, such as negative voltage DC-DC converters, the high current capability and low on-resistance of the FDB4020P-VB improve the efficiency and reliability of the converter, making it suitable for applications requiring high performance and high efficiency.
3. **Motor drive system**: In motor drive systems that require negative voltage control, this MOSFET can provide stable high current support, making it suitable for motor control and drive under negative voltage, ensuring system stability and high efficiency.
4. **Negative voltage switching circuit**: In the negative voltage switching circuit, the high current capability and low on-resistance of FDB4020P-VB make it suitable for high-efficiency negative voltage switching, and can achieve stable switching performance in negative voltage environment.
These application examples show the excellent performance of FDB4020P-VB in negative voltage and high current environment, making it a key component in high-efficiency negative voltage electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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